MSC1090M MICROSEMI | Alldatasheet

Document overview

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Technical content

Features

  • 1025-1150 MHz
  • GOLD METALLIZATION
  • INPUT MATCHED
  • INFINITE VSWR CAPABILITY @ RATED CONDITIONS
  • POUT = 90 W MINIMUM
  • GP = 8.4 dB RF AND MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. ELECTRICAL SPECIFICATIONS (Tcase = 25 °C) STATIC Value Symbol Test Conditions Min. Typ. Max. Units BVCBO I C = 10 mA I E = 0 mA 65 --- --- V BVCER IC = 10 mA R BE = 10Ω 65 --- --- V BVEBO I E = 1 mA I C = 0 mA 3.5 --- --- V ICES V CE = 50 V --- --- 6.25 mA HFE V CE = 5 V I C = 500 mA 15 --- 120 --- DYNAMIC Value Symbol Test Conditions Min. Typ. Max. Units POUT f =1025 - 1150 MHz P IN = 13W V CE =50V 90 --- --- W ηC f =1025 - 1150 MHz P IN = 13W V CE =50V 35 --- --- % GP f =1025 - 1150 MHz P IN = 13W V CE =50V 8.4 --- --- dB Conditions Pulse Width = 10 µs Duty Cycle = 1%

Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct.