MSC1075MP ADPOW | Alldatasheet
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Technical content
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCED POWER.COM or contact our factory direct. DESCRIPTION: The MSC1075MP is a gold - metallized silicon, NPN power transistor designed for applications requirin g high peak power and low duty cycles, such as IFF, DME, and TACAN. It is packaged in the .280" input - matched stripline flange package, resulting in improved broadband performance and low thermal resistance. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol P arameter Value Unit V CBO Collector - Base Voltage 65 V V CES Collector - Emitter Voltage 65 V V EBO Emitter - Base Voltage 3.5 V IC Device Current 5.5 A P DISS Power Dissipation 218.7 W T J Junction Temperature + 200 °°C T STG Storage Temperature – 65 to +150 °°C THERMAL DATA R TH(j - c) Junction - Case Thermal Resistance 0.8 °°C/W FeaturesFeatures
- DESIGNED FOR HIGH POWER PULSED IFF, DME, TACAN APPLICATIONS
- 80 W (typ.) IFF 1030 – 1090 MHz
- 75 W (min.) DME 1025 – 1150 MHz
- 50 W (typ.) TACAN 960 – 1215 MHz
- 8.0 dB MIN. GAIN
- REFRACTORY GOLD METALLIZATION
- EMITTER BALLASTING AND LOW THERMAL RESIS TANCE FOR RELIABILITY AND RUGGEDNESS
- INFINITE LOAD VSWR CAPABILITY AT SPECIFIED OPERATING CONDITIONS
- INPUT MATCHED COMMON BASE CONFIGURATION RF AND MICROWAVE TRA NSISTORS HF SSB APPLICATIONS
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MONTGOMERYVILLE, PA 18936 - 1013 PHONE: (215) 631 - 9840 FAX: (215) 631 - 9855
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCED POWER.COM or contact our factory direct. ELECTRICAL SPECIFICATIONS (Tcase = 25ELECTRICAL SPECIFICATIONS (Tcase = 25 °°C)C) STATIC Value Symbol Test Conditions Min. Typ. Max. Units BV CBO IC = 10 mA IE = 0 Ma 65 V BV CES IC = 25 mA V B E = 0 V 65 V BV EBO IE = 10 mA IC = 0 mA 3.5 V ICES V CE = 50 V IE = 0 mA 5 mA h FE V CE = 5 V IC = .1 A 10 DYNAMIC Value Symbol Test Conditions Min. Typ. Max. Units P OUT f = 1025 – 1150 MHz P IN = 13.0 W V CE = 50 V 75 W G P f = 1025 – 1150 MHz P IN = 13.0 W V CE = 50 V 7.5 dB Note: Pulse width = 10µSec. Duty Cycle = 1% This device is suitable for use under other pulse width/duty cycle conditions. Please contact the factory for specific applications assistance.
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCED POWER.COM or contact our factory direct. PACKAGE MECHANICAL DATAPACKAGE MECHANICAL DATA