MSC1015MP ADPOW | Alldatasheet
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Advanced Power Technology reser ves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. DESCRIPTION: The MSC1015MP is a gold - metallized, epitaxial, silicon NPN power transistor designed for applications requiring high pe ak power and low duty cycles, such as IFF, DME, and TACAN. It is packaged in the .280" input - matched stripline package, resulting in improved broadband performance and low thermal resistance. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter Value U nit V CBO Collector - Base Voltage 65 V V CES Collector - Emitter Voltage 65 V V EBO Emitter - Base Voltage 3.5 V IC Device Current 1.5 A P DISS Power Dissipation 87.5 W T J Junction Temperature + 200 °°C T STG Storage Temperature – 65 to +150 °°C THERMAL DATA R T H(j - c) Junction - Case Thermal Resistance 2 °°C/W FeaturesFeatures
- DESIGNED FOR HIGH POWER PULSED IFF, DME, TACAN APPLICATIONS
- 20 W (typ.) IFF 1030 – 1090 MHz
- 15 W (min.) DME 1025 – 1150 MHz
- 15 W (typ.) TACAN 960 – 1215 MHz
- REFRACTORY GOLD METALLIZATION
- EMITTER BALLASTING AND LOW THERMAL RESISTANCE FOR RELIABI LITY AND RUGGEDNESS
- 20:1 LOAD VSWR CAPABILITY AT SPECIFIED OPERATING CONDITIONS
- INPUT MATCHED, COMMON BASE CONFIGURATION RF AND MICROWAVE TRA NSISTORS AVIONICS APPLICATION S
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Advanced Power Technology reser ves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. ELECTRICAL SPECIFICATIONS (Tcase = 25ELECTRICAL SPECIFICATIONS (Tcase = 25 °°C)C) STATIC Value Symbol Test Conditions Min. Typ. Max. Units BV CBO IC = 10 mA IE = 0 mA 65 V BV CES IC = 25 mA V BE = 0 V 65 V BV E BO IE = 1 mA IC = 0 mA 3.5 V ICES V CE = 50 V IE = 0 mA 2 h FE V CE = 5 V IC = .1 A 10 200 DYNAMIC Value Symbol Test Conditions Min. Typ. Max. Units P OUT f = 1025 – 1150 MHz P IN = 1.5 W V CE = 50 V 15 W G P f = 1025 – 1150 MHz P IN = 1.5 W V CE = 50 V 10 dB ç C f = 1025 – 1150 MHz P IN = 1.5 W V CE = 50 V 30 % Note: Pulse width = 10µSec Duty Cycle = 1% IMPEDANCE DATAIMPEDANCE DATA Freq. (MHz) Z IN ( ΩΩ ) Z CL ( ΩΩ ) 960 2.5 + j 12.5 17.0 + j 15.5 1030 3.5 + j 12.5 17.0 + j 14.5 1090 3.0 + j 13.5 19.5 + j 12.5 1150 3.5 + j 14.0 18.0 + j 12.0 1215 5.0 + j 17.0 16.0 + j 12.0
Advanced Power Technology reser ves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. PACKAGE MECHANICAL DATAPACKAGE MECHANICAL DATA