MSC080SMA330B4 MICROCHIP | Alldatasheet
Document overview
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Technical content
Features
The following are key features of the MSC400SMA330B4 device:
- Low capacitances and low gate charge
- Fast switching speed due to low internal gate resistance (ESR)
- Stable operation at high junction temperature, T J(max) = 150 °C
- Fast and reliable body diode
- Superior avalanche ruggedness
- RoHS compliant Benefits The following are benefits of the MSC400SMA330B4 device:
- High efficiency to enable lighter, more compact system
- Simple to drive and easy to parallel
- Improved thermal capabilities and lower switching losses
- Eliminates the need for external freewheeling diode
- Lower system cost of ownership
Applications
The MSC400SMA330B4 device is designed for the following applications:
- PV inverter, converter, and industrial motor drives
- Smart grid transmission and distribution
- Induction heating and welding
- H/EV powertrain and EV charger
- Power supply and distribution © 2022 Microchip Technology Inc. and its subsidiaries Datasheet DS00004433A-page 1
- Device Specifications This section shows the specifications of the MSC400SMA330B4 device.
1.1 Absolute Maximum Ratings
The following table shows the absolute maximum ratings of the MSC400SMA330B4 device. Table 1-1. Absolute Maximum Ratings Symbol Parameter Ratings Unit VDSS Drain source voltage 3300 V ID Continuous drain current at TC = 25 °C 11 A Continuous drain current at TC = 100 °C 7 IDM Pulsed drain current1 27 VGS Gate-source voltage 23 to –10 V PD Total power dissipation at TC = 25 °C 131 W Linear derating factor 1.05 W/°C Note: 1. Repetitive rating: pulse width and case temperature limited by maximum junction temperature. The following table shows the thermal and mechanical characteristics of the MSC400SMA330B4 device. Table 1-2. Thermal and Mechanical Characteristics Symbol Characteristic/Test Conditions Min Typ Max Unit RθJC Junction-to-case thermal resistance 0.64 0.96 °C/W TJ Operating junction temperature –55 150 °C TSTG Storage temperature –55 150 °C TL Soldering temperature for 10 seconds (1.6 mm from case) 300 °C Mounting torque, 6-32 or M3 screw 10 lbf-in
1.1 N-m
Wt Package weight 0.22 oz 6.2 g
1.2 Electrical Performance
The following table shows the static characteristics of the MSC400SMA330B4 device. TJ = 25 °C unless otherwise specified. Table 1-3. Static Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit V(BR)DSS Drain-source breakdown voltage VGS = 0 V, ID = 100 μA 3300 V RDS(on) Drain-source on resistance1 VGS = 20 V, ID = 5 A 416 520 mΩ MSC400SMA330B4 Device Specifications © 2022 Microchip Technology Inc. and its subsidiaries Datasheet DS00004433A-page 2
Symbol Characteristic Test Conditions Min Typ Max Unit VGS(th) Gate-source threshold voltage VGS = VDS, ID = 1 mA 1.9 2.97 V IDSS Zero gate voltage drain current VDS = 3300 V, VGS = 0 V 100 µA VDS = 3300 V, VGS = 0 V, TJ = 125 °C 500 IGSS Gate-source leakage current VGS = 20 V/–10 V ±100 nA Note: 1. Pulse test: pulse width < 380 μs, duty cycle < 2%. The following table shows the dynamic characteristics of the MSC400SMA330B4 device. TJ = 25 °C unless otherwise specified. Table 1-4. Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Ciss Input capacitance VGS = 0 V VDD = 2400 V VAC = 25 mV ƒ = 200 kHz 579 pF Crss Reverse transfer capacitance Coss Output capacitance 18 Qg Total gate charge VDD = 2600 V VGS = –5 V/20 V ID = 5 A 37 nC Qgs Gate-source charge 10 Qgd Gate-drain charge 10 td(on) Turn-on delay time VDD = 2310 V VGS = –5 V/20 V ID = 10 A Rg(ext) = 16 Ω Freewheeling diode = MSC400SMA330B4 (VGS = –5 V) (reference Fig. 1-17) 16 ns tr Voltage rise time 8 td(off) Turn-off delay time 16 tf Voltage fall time 20 Eon Turn-on switching energy 750 µJ Eoff Turn-off switching energy 120 ESR Gate equivalent series resistance f = 1 MHz, 25 mV, drain short 3.7 Ω The following table shows the body diode characteristics of the MSC400SMA330B4 device. TJ = 25 °C unless otherwise specified. Table 1-5. Body Diode Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit VSD Diode forward voltage ISD = 5 A, VGS = 0 V 4.0 V ISD = 5 A, VGS = –5 V 4.0 trr Reverse recovery time ISD = 10 A, VDD = 2310 V, Drive Rg = 16 Ω, VGS = –5 V, dl/dt = –7900 A/μs 14 ns Qrr Reverse recovery charge 175 nC IRRM Reverse recovery current 32 A MSC400SMA330B4 Device Specifications © 2022 Microchip Technology Inc. and its subsidiaries Datasheet DS00004433A-page 3
1.3 Typical Performance Curves
This section shows the typical performance curves of the MSC400SMA330B4 device. Figure 1-1. Drain Current vs. VDS at TJ Figure 1-2. Drain Current vs. VDS at VGS Figure 1-3. Drain Current vs. VDS at VGS Figure 1-4. Drain Current vs. VDS at VGS MSC400SMA330B4 Device Specifications © 2022 Microchip Technology Inc. and its subsidiaries Datasheet DS00004433A-page 4
- Package Specification This section shows the package specification of the MSC400SMA330B4 device.
2.1 Package Outline Drawing
The following figure illustrates the TO-247-4L package outline of the MSC400SMA330B4 device. Figure 2-1. Package Outline Drawing The following table shows the TO-247-4L dimensions and should be used in conjunction with the package outline drawing. Table 2-1. TO-247-4L Dimensions Symbol Min (mm) Max (mm) Min (in.) Max (in.) A 4.90 5.17 0.193 0.204 B 1.85 2.11 0.073 0.083 C 2.25 2.51 0.089 0.099 D 0.55 0.68 0.022 0.027 E 5.49 5.74 0.216 0.226 F 3.56 3.66 0.140 0.144 G 6.15 BSC 0.242 BSC H 20.83 21.08 0.820 0.830 MSC400SMA330B4 Package Specification © 2022 Microchip Technology Inc. and its subsidiaries Datasheet DS00004433A-page 9
Symbol Min (mm) Max (mm) Min (in.) Max (in.) I 19.81 20.32 0.780 0.800 J 1.07 1.33 0.042 0.052 K 15.77 16.03 0.621 0.631 L 13.89 14.15 0.547 0.557 M 16.25 16.85 0.640 0.663 N 2.00 2.75 0.079 0.108 O 7.10 7.50 0.280 0.295 P 2.87 BSC 0.113 BSC Q 5.08 BSC 0.200 BSC R 2.54 BSC 0.100 BSC Terminal 1 Drain Terminal 2 Source Terminal 3 Source sense Terminal 4 Gate Terminal 5 Drain MSC400SMA330B4 Package Specification © 2022 Microchip Technology Inc. and its subsidiaries Datasheet DS00004433A-page 10
- Revision History Table 3-1. Revision History Revision Date Description A 02/2022 Document created. MSC400SMA330B4
Revision History
© 2022 Microchip Technology Inc. and its subsidiaries Datasheet DS00004433A-page 11
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