MSC080SMA120J MICROSEMI | Alldatasheet

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Technical content

Features

The following are key features of the MSC080SMA120J device:

  • Low capacitances and low gate charge
  • Fast switching speed due to low internal gate resistance (ESR)
  • Stable operation at high junction temperature, TJ(max) = 175 °C
  • Fast and reliable body diode
  • Superior avalanche ruggedness
  • RoHS compliant
  • Isolated voltage to 2500 V Benefits The following are benefits of the MSC080SMA120J device:
  • High efficiency to enable lighter, more compact system
  • Simple to drive and easy to parallel
  • Improved thermal capabilities and lower switching losses
  • Eliminates the need for external freewheeling diode
  • Lower system cost of ownership

Applications

The MSC080SMA120J device is designed for the following applications:

  • PV inverter, converter, and industrial motor drives
  • Smart grid transmission and distribution
  • Induction heating and welding
  • H/EV powertrain and EV charger
  • Power supply and distribution 1050-7767 MSC080SMA120J Datasheet Revision A

This section shows the device specifications for the MSC080SMA120J device. Absolute Maximum Ratings The following table shows the absolute maximum ratings of the MSC080SMA120J device. Table 1 • Absolute Maximum Ratings UnitRatingsParameterSymbol V1200Drain source voltageVDSS A37Continuous drain current at TC = 25 °CID 26Continuous drain current at T C = 100 °C 91Pulsed drain current1IDM V23 to –10Gate-source voltageVGS W200Total power dissipation at TC = 25 °CPD W/°C1.33Linear derating factor Note: 1. Repetitive rating: pulse width and case temperature limited by maximum junction temperature. The following table shows the thermal and mechanical characteristics of the MSC080SMA120B device. Table 2 • Thermal and Mechanical Characteristics UnitMaxTypMinCharacteristicSymbol °C/W0.750.50Junction-to-case thermal resistanceRθJC °C175–55Operating junction temperatureTJ 150–55Storage temperatureTSTG 260Soldering temperature for 10 seconds (1.6 mm from case)TL V2500RMS voltage (50 Hz–60 Hz sinusoidalwaveform from terminals to mounting base for 1 minute) VISOLATION lbf-in10Mounting torque, M4 screw N-m1.1 oz1.03Package weightWt 2050-7767 MSC080SMA120J Datasheet Revision A Device Specifications

UnitMaxTypMinCharacteristicSymbol g29.2 Electrical Performance The following table shows the static characteristics of the MSC080SMA120Jdevice. TJ = 25 °C unless otherwise specified. Table 3 • Static Characteristics UnitMaxTypMinTest ConditionsCharacteristicSymbol V1200VGS = 0 V, ID = 100 µADrain-source break- down voltage V(BR)DSS mΩ10080VGS = 20 V, ID = 15 ADrain-source on re- sistance 1 RDS(on) V2.81.8VGS = VDS , ID = 1 mAGate-source threshold voltage VGS(th) mV/°C–4.5VGS = VDS , ID = 1 mAThreshold voltage coefficient ΔVGS(th)/ΔTJ µA100VDS = 1200 V, TJ = 25 °C, VGS = 0 VZero gate voltage drain current IDSS 500VDS = 1200 V, TJ = 125 °C, VGS = 0 V nA100VGS = 20 VGate-source leak- age current IGSS 100VGS = –10 V Note: 1. Pulse test: pulse width < 380 µs, duty cycle < 2%. The following table shows the dynamic characteristics of the MSC080SMA120J device. TJ = 25 °C unless otherwise specified. Table 4 • Dynamic Characteristics UnitMaxTypMinTest ConditionsCharacteristicSymbol pF838VGS = 0 V, VDD = 1000 V VAC = 25 mV, ƒ = 1 MHz Input capacitanceCiss 9Reverse transfer capacitance Crss 84OutputcapacitanceCoss nC64VGS = –5 V/20 V, VDD = 800 V ID = 15 A Total gate chargeQg 3050-7767 MSC080SMA120J Datasheet Revision A Device Specifications

UnitMaxTypMinTest ConditionsCharacteristicSymbol 12Gate-source chargeQgs 19Gate-drain chargeQgd ns5VDD = 800 V, VGS = –5 V/20 V ID = 15 A, RG (ext) = 4 Ω1 Turn-on delay timetd(on) 4Current rise timetr Freewheeling diode = MSC080SMA120J (VGS = –5V) 21Turn-off delay timetd(off) 15Current fall timetf µJ310Turn-on switching energy 2 Eon 27Turn-off switching energy Eoff ns4VDD = 800 V, VGS = –5 V/20 V ID = 30 A, RG (ext) = 4 Ω1 Turn-on delay timetd(on) 4Current rise timetr Freewheeling diode = MSC080SMA120J (VGS = –5V) 24Turn-off delay timetd(off) 19Current fall timetf µJ703Turn-on switching energy 2 Eon 71Turn-off switching energy Eoff Ω1.9f = 1 MHz, 25 mV, drain shortEquivalent series resistance ESR µS3VDS = 960 V, VGS = 20 V, TC = 25 °CShort circuit with- stand time SCWT mJ1000VDS = 150 V, ID = 15 A, TC = 25 °CAvalanche energy, single pulse EAS Notes: 1. RG is total gate resistance excluding internal gate driver impedance. 2. Eon includes energy of the freewheeling diode. The following table shows the body diode characteristics of the MSC080SMA120J device. TJ = 25 °C unless otherwise specified. 4050-7767 MSC080SMA120J Datasheet Revision A Device Specifications

Figure 13 • Maximum Transient Thermal Impedance 8050-7767 MSC080SMA120J Datasheet Revision A Device Specifications

This section shows the package specification for the MSC080SMA120J device. Package Outline Drawing The following figure illustrates the SOT-227 package drawing for the MSC080SMA120Jdevice. The dimensions in the figure below are in millimeters and (inches). Figure 14 • Package Outline Drawing 9050-7767 MSC080SMA120J Datasheet Revision A Package Specification

Microsemi's product warranty is set forth in Microsemi's Sales Order Terms and Conditions. Information contained in this publication is provided for the sole purpose of designing with and using Microsemi products. Information regarding device applications and the like is provided only for your convenience and may be superseded by updates. Buyer shall not rely on any data and performance specifications or parameters provided by Microsemi. It is your responsibility to ensure that your application meets with your specifications. THIS INFORMATION IS PROVIDED "AS IS." MICROSEMI MAKES NO REPRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION, INCLUDING BUT NOT LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE, NON-INFRINGEMENT, MERCHANTABILITY OR FITNESS FOR A PARTICULAR PURPOSE. IN NO EVENT WILL MICROSEMI BE LIABLE FOR ANY INDIRECT, SPECIAL, PUNITIVE, INCIDENTAL OR CONSEQUENTIAL LOSS, DAMAGE, COST OR EXPENSE WHATSOEVER RELATED TO THIS INFORMATION OR ITS USE, HOWEVER CAUSED, EVEN IF MICROSEMI HAS BEEN ADVISED OF THE POSSIBILITY OR THE DAMAGES ARE FORESEEABLE. TO THE FULLEST EXTENT ALLOWED BY LAW, MICROSEMI’S TOTAL LIABILITY ON ALL CLAIMS IN RELATED TO THIS INFORMATION OR ITS USE WILL NOT EXCEED THE AMOUNT OF FEES, IF ANY, YOU PAID DIRECTLY TO MICROSEMI FOR THIS INFORMATION. Use of Microsemi devices in life support, mission-critical equipment or applications, and/or safety applications is entirely at the buyer’s risk, and the buyer agrees to defend and indemnify Microsemi from any and all damages, claims, suits, or expenses resulting from such use. No licenses are conveyed, implicitly or otherwise, under any Microsemi intellectual property rights unless otherwise stated. Microsemi 2355 W. Chandler Blvd. Chandler, AZ 85224 USA Within the USA: +1 (480) 792-7200 Fax: +1 (480) 792-7277 www.microsemi.com © 2020 Microsemi and its corporate affiliates. All rights reserved. Microsemi and the Microsemi logo are trademarks of Microsemi Corporation and its corporate affiliates. All other trademarks and service marks are the property of their respective owners. Microsemi Corporation, a subsidiary of Microchip Technology Inc. (Nasdaq: MCHP), and its corporate affiliates are leading providers of smart, connected and secure embedded control solutions. Their easy-to-use development tools and comprehensive product portfolio enable customers to create optimal designs which reduce risk while lowering total system cost and time to market. These solutions serve more than 120,000 customers across the industrial, automotive, consumer, aerospace and defense, communications and computing markets. Headquartered in Chandler, Arizona, the company offers outstanding technical support along with dependable delivery and quality. Learn more at www.microsemi.com. 050-7767 | February 2020 | Released 10050-7767 MSC080SMA120J Datasheet Revision A Legal