MSC060SMB120SD MICROCHIP | Alldatasheet

Document overview

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Technical content

Features

  • Low capacitances and low gate charge
  • Fast switching speed due to low internal gate resistance (ESR)
  • Stable operation at high junction temperature, T J(max) = 175 °C
  • Fast and reliable body diode
  • Superior avalanche ruggedness (100% UIS production tested)
  • RoHS compliant Benefits
  • High efficiency to enable lighter and more compact system
  • Simple to drive and easy to parallel
  • Improved thermal capabilities and lower switching losses
  • Eliminates the need for external freewheeling diode
  • Lower system cost of ownership

Applications

  • Photovoltaic (PV) inverter, converter, and industrial motor drives
  • Smart grid transmission and distribution
  • Induction heating and welding
  • Hybrid Electric Vehicle (HEV) powertrain and Electric Vehicle (EV) charger
  • Power supply and distribution 1200V, 60 mΩ N-Channel mSiC™ MOSFET MSC060SMB120SD

© 2025 Microchip Technology Inc. and its subsidiaries DS50004024A - 2 1. Device Specific ations This section shows the specifications of this device. 1.1. Absolute Maximum Ratings The following table shows the absolute maximum ratings of this device. Table 1-1. Absolute Maximum Ratings Symbol Parameter Ratings Unit VDSS Drain source voltage 1200 V ID Continuous drain current at TC = 25 °C 38 AContinuous drain current at TC = 100 °C 27 IDM Pulsed drain current1 84 VGS Gate-source voltage 21/–10 V Transient gate-source voltage 23/–12 Recommended turn-on gate-source voltage 15 to 18 Recommended turn-off gate-source voltage –5 PD Total power dissipation at TC = 25 °C 192 W Linear derating factor 1.3 W/°C Note: 1. Repetitive rating: Pulse width and case temperature are limited by the maximum junction temperature. 1.2. Thermal and Mechanical Char act eristics The following table shows the thermal and mechanical characteristics of this device. Table 1-2. Thermal and Mechanical Char act eristics Symbol Characteristic/Test Conditions Min. Typ. Max. Unit RθJC Junction-to-case thermal resistance — 0.6 0.78 °C/W TJ Operating junction temperature –55 — 175 TSTG Storage temperature –55 — 175 — Reflow temperature — — 260 °C Wt Package weight — 1.6 — g ESD practices should comply with JESD-625. 1.3. Electrical Performance The following table shows the static characteristics of this device at TJ = 25 °C unless otherwise specified. Table 1-3. St atic Char act eristics Symbol Characteristic Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage VGS = 0V, ID = 100 μA 1200 — — V RDS(on) Drain-source on resistance1 VGS = 18V, ID = 8A — 60 80 mΩVGS = 15V, ID = 8A — 74 — VGS = 18V, ID = 8A, TJ = 175 °C — 99 — VGS(th) Gate-source threshold voltage VGS = VDS, ID = 1.0 mA 1.9 3.0 5.0 V VDS = 960V, ID = 1.0 mA 1.5 — —

© 2025 Microchip Technology Inc. and its subsidiaries DS50004024A - 3 Table 1-3. St atic Char act eristics (c ontinued) Symbol Characteristic Test Conditions Min. Typ. Max. Unit IDSS Zero gate voltage drain current VDS = 1200V, VGS = 0V — 0.02 3.80 µA VDS = 1200V, VGS = 0V, TJ = 175 °C — 0.36 — IGSS Gate-source leakage current VGS = 21V/–10V — — ±100 nA Note: 1. Pulse test: pulse width < 380 μs, duty cycle < 2%. The following table shows the dynamic characteristics of the device at TJ = 25 °C unless otherwise specified. Table 1-4. Dynamic Char act eristics Symbol Characteristic Test Conditions Min. Typ. Max. Unit Ciss Input capacitance VGS = 0V, VDD = 1000V, VAC = 25 mV, ƒ = 100 kHz — 1143 — pFCrss Reverse transfer capacitance — 4.0 — Coss Output capacitance — 53 — QG Total gate charge VGS = 18V/–5V, VDD = 800V, ID = 8A — 45 — nCQGS Gate-source charge — 13 — QGD Gate-drain charge — 8.0 — td(on) Turn-on delay time VDD = 820V, VGS = 18V/–5V, ID = 30A, RG = 8Ω, Freewheeling diode = MSC060SMB120SD (VGS = –5V); reference Figure 1-19 — 10 — ns tr Rise time — 13 — td(off) Turn-off delay time — 18 — tf Fall time — 6 — Eon Turn-on switching energy — 224 — µJ Eoff Turn-off switching energy — 93 — ESR Gate equivalent series resistance f = 1 MHz, 25 mV, drain-to-source short — 2.25 — Ω SCWT Short circuit withstand time VDS = 960, VGS = 18V/0V, RG = 20Ω — 2 — µs EAS Avalanche energy, single pulse ID = 2.3A, 100% UIS production tested 420 — — mJ EAS CHAR ID = 10A, last typical pass — 1020 — The following table shows the body diode characteristics of the device at TJ = 25 °C unless otherwise specified. Table 1-5. Body Diode Char act eristics Symbol Characteristic Test Conditions Min. Typ. Max. Unit VSD Diode forward voltage ISD = 8A, VGS = 0V — 3.5 — V ISD = 8A, VGS = –5V — 3.9 5.0 trr Reverse recovery time ISD = 30A, VGS = –5V, Drive RG = 8Ω, VDD = 820V, dI/dt = –6800 A/μs — 8 — ns Qrr Reverse recovery charge — 128 — nC IRRM Reverse recovery current — 25 — A

© 2025 Microchip Technology Inc. and its subsidiaries DS50004024A - 5 Figure 1-5. ID vs. VDS 3rd Quadrant Conduction -4 -3 -2 -1 0 -20 -15 -10 VDS, Drain-to-Source Voltage (V) ID, Drain Current (A) TJ = 25 °C +18 VGS +15 VGS -5 VGS

0 VGS

VGS -5 to 0 in 1V steps Figure 1-6. ID vs. VDS 3rd Quadrant Conduction -4 -3 -2 -1 0 -20 -15 -10 VDS, Drain-to-Source Voltage (V) ID, Drain Current (A) +18 VGS +15 VGS -5 VGS VGS -5 to 0 in 1V steps TJ = 150 °C Figure 1-7. RDS(on) vs. Junction Temperature -50 -25 0 25 50 75 100 125 150 175 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 TJ, Junction Temperature (°C) RDS(on), Drain-to-Source on Resistance Normalized to 25 °C, VGS = 18V, ID at 8A VGS = 18V VGS = 15V Figure 1-8. Gate Charge Char act eristics 0 10 20 30 40 50 QG, Gate Charge (nC) VGS, Gate-to-Source Voltage (V) IDS = 8A VDS = 800V

© 2025 Microchip Technology Inc. and its subsidiaries DS50004024A - 9 2. Package Specific ation This section shows the package specification of this device. 2.1. Package Outline Drawing The following figure illustrates the TO-263-7L XL package outline of this device. Figure 2-1. Package Outline Drawing SEATING PLANE TOP VIEW SIDE VIEW END VIEW

0.10 C A B

E 7X b e C BOTTOM VIEW A A A1c (DATUM A) E D L 1234567 (4.63) (Ø1.6) B H Ø The following table shows the TO-263-7L XL dimensions and should be used in conjunction with the package outline drawing. Table 2-1. TO-263-7L XL Dimensions Symbol Description Min. (mm) Max. (mm) N Number of leads 7 e Pitch 1.27 BSC

© 2025 Microchip Technology Inc. and its subsidiaries DS50004024A - 10 Table 2-1. TO-263-7L XL Dimensions (c ontinued) Symbol Description Min. (mm) Max. (mm) A Overall height 4.30 4.70 A1 Seating plane height — 0.25 A2 Seating plane to lead 2.20 2.60 b Lead width 0.52 0.72 b1 0.60 0.80 c Lead thickness 0.42 0.62 c2 Thermal pad thickness 1.07 1.47 L Lead length 4.55 4.95 L1 Tab length 0.87 1.27 L2 Foot length 2.48 2.88 D Molded body length 9.05 9.45 D1 Thermal pad length 7.58 7.98 E Total width 9.80 10.20 E1 Thermal pad width step back 6.30 6.70 E2 Thermal pad width 7.80 8.20 Ø Lead foot angle 0° 8° Note: Dimensioning and tolerancing per ASME Y14.5M.

  • BSC: Basic dimension. Theoretically exact value shown without tolerances. 2.2. Recommended Land P attern The following figure illustrates the recommended land pattern of this device. Figure 2-2. Recommended Land P attern X1G2 E 34 5 6 7 SILK SCREEN The following table shows the recommended land pattern dimensions.

© 2025 Microchip Technology Inc. and its subsidiaries DS50004024A - 11 Table 2-2. Recommended Land P attern Dimensions Symbol Description Min. (mm) Nom. (mm) Max. (mm) E Contact pitch 1.27 BSC X2 Center pad width — — 8.30 Y2 Center pad length — — 8.45 C1 Contact pad spacing — 6.45 — C2 Contact pad spacing — 4.30 — X1 Contact pad width (X7) — — 0.80 Y1 Contact pad length (X7) — — 2.90 G1 Contact pad to center pad (X7) 3.88 — — G2 Contact pad to contact pad (X6) 0.47 — — Notes:

  • Dimensioning and tolerancing per ASME Y14.5M. – BSC: Basic dimension. Theoretically exact value shown without tolerances.
  • For best soldering results, thermal vias, if used, should be filled or tented to avoid solder loss during reflow process. 2.3. Product Marking In f ormation The following figure shows the product marking information of this device. Figure 2-3. Product Marking In f ormation Marking Marking Identifier Description XXXXXXXXXX Catalog Part Number (CPN) This is the unique catalog number for the finished device. Note: For automotive-grade device, the VAO identifier is not shown. YYWWNNN Traceability code A unique identifier assigned by Microchip to track and verify the manufacturing history of the device. YYWW Date code A four-digit number which reflects the year and work week of manufacturing. It is the first four digits of the traceability code. PP Country of origin Two-character code per ISO 3166-1-Alpha-2, indicating the manufacturing country. e3 ROHS category (Lead finish code) This code specifies the type of finish applied to the device’s leads. Note: e3 indicates a 100% Matte Tin (Sn) finish.

Revision History

© 2025 Microchip Technology Inc. and its subsidiaries DS50004024A - 12 3. Revision History The revision history describes the changes that were implemented in the document. The changes are listed by revision, starting with the most current publication. Table 3-1. Revision History Revision Date Description A 12/2025 Initial revision

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