MSC030SDA120B MICROSEMI | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 10
Technical content
Datasheet sections
- 1 Revision History
- 1.1 Revision A
- 2 Product Overview
- 2.1 Features
- 2.2 Benefits
- 2.3 Applications
- 3 Electrical Specifications
- 3.1 Absolute Maximum Ratings
- 3.2 Electrical Performance
- 3.3 Performance Curves
- 4 Package Specification
- 4.1 Package Outline Drawing
Zero Recovery Silicon Carbide Schottky Diode Final January 2018
Zero Recovery Silicon Carbide Schottky Diode Microsemi Proprietary and Confidential. MSC030SDA120B Datasheet Revision A 1
1 Revision History
The revision history describes the changes that were implemented in the document. The changes are listed by revision, starting with the most current publication.
1.1 Revision A
Revision A was published in January 2018. It is the first publication of this document.
Zero Recovery Silicon Carbide Schottky Diode Microsemi Proprietary and Confidential. MSC030SDA120B Datasheet Revision A 2
2 Product Overview
The silicon carbide (SiC) power Schottky barrier diodes (SBD) product line from Microsemi increases your performance over silicon diode solutions while lowering your total cost of ownership for high- voltage applications. The MSC030SDA120B is a 1200 V, 30 A SiC SBD in a two-lead TO-247 package shown below.
2.1 Features
The following are key features of the MSC030SDA120B device: Low forward voltage Low leakage current No reverse recovery current/no forward recovery Avalanche energy rated RoHS compliant
2.2 Benefits
The following are benefits of the MSC030SDA120B device: Higher-reliability systems Minimizes heat sink requirements Higher efficiency
2.3 Applications
The MSC030SDA120B device is designed for the following applications: H/EV powertrain and EV charger Power supply and distribution PV inverter, converter, and industrial motor drives Smart grid transmission and distribution Aviation
Zero Recovery Silicon Carbide Schottky Diode Microsemi Proprietary and Confidential. MSC030SDA120B Datasheet Revision A 3
3 Electrical Specifications
This section details the electrical specifications for the MSC030SDA120B device.
3.1 Absolute Maximum Ratings
The following table shows the absolute maximum ratings for the MSC030SDA120B device. All Ratings: T = 25 °C unless otherwise specified.C Table 1 • Absolute Maximum Ratings Symbol Parameter Ratings Unit VR Maximum DC reverse voltage 1200 V VRRM Maximum peak repetitive reverse voltage VRWM Maximum working peak reverse voltage IF Maximum DC forward current T = 25 °CC 65 A T = 135 °CC 29 T = 145 °CC 24 IFRM Repetitive peak forward surge current (T = 25 °C, t = 8.3 ms, half sine C p wave) IFSM Non-repetitive forward surge current (T = 25°C, t = 8.3 ms, half sine C p wave) 165 PTOT Power dissipation T = 25 °CC 259 W T = 110 °CC 112 T , TJ STG Operating junction and storage temperature range –55 to 175 °C TL Lead temperature for 10 seconds 300 EAS Single pulse avalanche energy (starting T = 25 °C, L = 0.22 mH,J peak I = 30 A)L 100 mJ The following table shows the thermal and mechanical characteristics of the MSC030SDA120B device. Table 2 • Thermal and Mechanical Characteristics Symbol Characteristic Min Typ Max Unit RθJC Junction-to-case thermal resistance 0.4 0.58 °C/W 5.9 g Torque Maximum mounting torque 10 lb-in
1.1 N-m
Zero Recovery Silicon Carbide Schottky Diode Microsemi Proprietary and Confidential. MSC030SDA120B Datasheet Revision A 4
3.2 Electrical Performance
The following table shows the static characteristics of the MSC030SDA120B device. Table 3 • Static Characteristics Symbol Characteristic/Test Conditions Min Typ Max Unit VF Forward Voltage I = 30 A, T = 25 °CF J 1.5 1.8 V I = 30 A, T = 175 °CF J 2.1 IRM Reverse leakage current V = 1200 V, T = 25 °CR J 9 200 μA V = 1200 V, T = 175 °CR J 150 QC Total capacitive charge V = 600 V, T = 25 °CR J 130 nC CJ Junction capacitance V = 400 V, T = 25 °C, ƒ = 1 MHzR J 141 pF Junction capacitance V = 800 V, T = 25 °C, ƒ = 1 MHzR J 105
Zero Recovery Silicon Carbide Schottky Diode Microsemi Proprietary and Confidential. MSC030SDA120B Datasheet Revision A 5
3.3 Performance Curves
This section shows the typical performance curves for the MSC030SDA120B device. Figure 1 • Maximum Transient Thermal Impedance Figure 2 • Forward Current vs. Forward Voltage Figure 3 • Max Forward Current vs. Case Temp Figure 4 • Max Power Dissipation vs. Case Temp Figure 5 • Reverse Current vs. Reverse Voltage
Zero Recovery Silicon Carbide Schottky Diode Microsemi Proprietary and Confidential. MSC030SDA120B Datasheet Revision A 7
4 Package Specification
This section outlines the package specification for the MSC030SDA120B device.
4.1 Package Outline Drawing
This section details the TO-247 package drawing of the MSC030SDA120B device. Dimensions are in millimeters and (inches). Figure 8 • Package Outline Drawing
Zero Recovery Silicon Carbide Schottky Diode Microsemi Proprietary and Confidential. MSC030SDA120B Datasheet Revision A 8 Microsemi Corporate Headquarters One Enterprise, Aliso Viejo, CA 92656 USA Within the USA: +1 (800) 713-4113 Outside the USA: +1 (949) 380-6100 Fax: +1 (949) 215-4996 Email: sales.support@microsemi.com www.microsemi.com © 2018 Microsemi Corporation. All rights reserved. Microsemi and the Microsemi logo are trademarks of Microsemi Corporation. All other trademarks and service marks are the property of their respective owners. Microsemi makes no warranty, representation, or guarantee regarding the information contained herein or the suitability of its products and services for any particular purpose, nor does Microsemi assume any liability whatsoever arising out of the application or use of any product or circuit. The products sold hereunder and any other products sold by Microsemi have been subject to limited testing and should not be used in conjunction with mission-critical equipment or applications. Any performance specifications are believed to be reliable but are not verified, and Buyer must conduct and complete all performance and other testing of the products, alone and together with, or installed in, any end-products. Buyer shall not rely on any data and performance specifications or parameters provided by Microsemi. It is the Buyer's responsibility to independently determine suitability of any products and to test and verify the same. The information provided by Microsemi hereunder is provided "as is, where is" and with all faults, and the entire risk associated with such information is entirely with the Buyer. Microsemi does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other IP rights, whether with regard to such information itself or anything described by such information. Information provided in this document is proprietary to Microsemi, and Microsemi reserves the right to make any changes to the information in this document or to any products and services at any time without notice. Microsemi Corporation (Nasdaq: MSCC) offers a comprehensive portfolio of semiconductor and system solutions for aerospace & defense, communications, data center and industrial markets. Products include high-performance and radiation-hardened analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and synchronization devices and precise time solutions, setting the world's standard for time; voice processing devices; RF solutions; discrete components; enterprise storage and communication solutions; security technologies and scalable anti-tamper products; Ethernet solutions; Power-over-Ethernet ICs and midspans; as well as custom design capabilities and services. Microsemi is headquartered in Aliso Viejo, California, and has approximately 4,800 employees globally. Learn more at www.microsemi.com. 053-4082