MSC015SMA070B4 MICROSEMI | Alldatasheet
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050-7764 MSC015SMA070B4 Datasheet Revision A 1 MSC015SMA070B4 Silicon Carbide N-Channel Power MOSFET
1 Product Overview
The silicon carbide (SiC) power MOSFET product line from Microsemi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The MSC015SMA070B4 device is a 700 V, 15 mΩ SiC MOSFET in a TO-247 4-lead package with a source sense.
1.1 Features
The following are key features of the MSC015SMA070B4 device: Low capacitances and low gate charge Fast switching speed due to low internal gate resistance (ESR) Stable operation at high junction temperature, T = 175 °CJ(max) Fast and reliable body diode Superior avalanche ruggedness RoHS compliant
1.2 Benefits
The following are benefits of the MSC015SMA070B4 device: High efficiency to enable lighter, more compact system Simple to drive and easy to parallel Improved thermal capabilities and lower switching losses Eliminates the need for external freewheeling diode Lower system cost of ownership
1.3 Applications
The MSC015SMA070B4 device is designed for the following applications: PV inverter, converter, and industrial motor drives Smart grid transmission and distribution Induction heating and welding H/EV powertrain and EV charger Power supply and distribution
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2 Device Specifications
2.1 This section shows the specifications of the MSC015SMA070B4 device. Absolute Maximum Ratings The following table shows the absolute maximum ratings of the MSC015SMA070B4 device. Table 1 • Absolute Maximum Ratings Symbol Characteristic Ratings Unit VDSS Drain source voltage 700 V ID Continuous drain current at T = 25 °CC 140 A Continuous drain current at T = 100 °CC 99 IDM Pulsed drain current 1 350 VGS Gate-source voltage 23 to –10 V PD Total power dissipation at T = 25 °CC 455 W Linear derating factor 3.03 W/°C Note: 1. Repetitive rating: pulse width and case temperature limited by maximum junction temperature. The following table shows the thermal and mechanical characteristics of the MSC015SMA070B4 device. Table 2 • Thermal and Mechanical Characteristics Symbol Characteristic Min Typ Max Unit RθJC Junction-to-case thermal resistance 0.22 0.33 °C/W TJ Operating junction temperature –55 175 °C TSTG Storage temperature –55 150 TL Soldering temperature for 10 seconds (1.6 mm from case) 260 Mounting torque, 6-32 or M3 screw 10 lbf-in
1.1 N-m
Wt Package weight 0.22 oz 6.2 g
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2.2 Electrical Performance
The following table shows the static characteristics of the MSC015SMA070B4 device. TJ = 25 °C unless otherwise specified. Table 3 • Static Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit V(BR)DSS Drain-source breakdown voltage V = 0 V, I = 100 µAGS D 700 V RDS(on) Drain-source on resistance 1 V = 20 V, I = 40 AGS D 15 19 mΩ VGS(th) Gate-source threshold voltage V = V I = 4 mAGS DS, D 1.9 2.4 V ΔV /ΔTGS(th) J Threshold voltage coefficient V = V , I = 4 mAGS DS D –3.4 mV/°C IDSS Zero gate voltage drain current V , = 700 V, V = 0 VDS GS 100 µA V = 700 V, V = 0 VDS GS T = 125 °CJ 500 IGSS Gate-source leakage current V = 20 V/–10 VGS ±100 nA Notes: Pulse test: pulse width < 380 µs, duty cycle < 2%. The following table shows the dynamic characteristics of the MSC015SMA070B4 device. TJ = 25 °C unless otherwise specified. Table 4 • Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Ciss Input capacitance V = 0 V, V = 700 V, V = 25 mV,GS DD AC ƒ = 1 MHz 4500 pF Crss Reverse transfer capacitance 29 Coss Output capacitance 510 Qg Total gate charge V = –5 V/20 V, V = 470 VGS DD I = 40 AD 215 nC Qgs Gate-source charge 58 Qgd Gate-drain charge 35 td(on) Turn-on delay time VDD = 470 V, VGS = –5 V/20 V, ID = 50 A RG(ext) = 2.5 Ω1 Freewheeling diode = MSC015SMA070B4 (V GS = –5 V) 38 ns tr Current rise time 8 td(off) Turn-off delay time 55 tf Current fall time 14 Eon Turn-on switching energy 2 381 µJ Eoff Turn-off switching energy 48 td(on) Turn-on delay time VDD = 470 V, VGS = –5 V/20 V, ID = 50 A RG(ext) = 2.5 Ω1 Freewheeling diode = MSC050SDA070B 30 ns tr Current rise time 8 td(off) Turn-off delay time 50 tf Current fall time 8 Eon Turn-on switching energy 2 244 µJ Eoff Turn-off switching energy 63 ESR Equivalent series resistance f = 1 MHz, 25 mV, drain short 0.69 Ω SCWT Short circuit withstand time V = 560 V, V = 20 VDS GS 3 µs EAS Avalanche energy, single pulse VDS = 150 V, ID = 40 A 4400 mJ Notes:
050-7764 MSC015SMA070B4 Datasheet Revision A 4 Notes: R is total gate resistance excluding internal gate driver impedance.G E includes energy of the freewheeling diode.on The following table shows the body diode characteristics of the MSC015SMA070B4 device. TJ = 25 °C unless otherwise specified. Table 5 • Body Diode Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit VSD Diode forward voltage I = 40 A, V = 0 VSD GS 3.4 V I = 40 A, V = –5 VSD GS 3.8 V trr Reverse recovery time I = 40 A, V = –5 VSD GS V = 470 VDD dl/dt = –1000 A/µs 38 ns Qrr Reverse recovery charge 318 nC IRRM Reverse recovery current 14.8 A
2.3 Typical Performance Curves
This section shows the typical performance curves for the MSC015SMA070B4 device. Figure 1 • Drain Current vs. Drain-to-Source Voltage Figure 2 • Drain Current vs. Drain-to-Source Voltage Figure 3 • Drain Current vs. Drain-to-Source Voltage Figure 4 • Drain Current vs. Drain-to-Source Voltage
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3 Package Specification
3.1 This section shows the package specification of the MSC015SMA070B4 device. Package Outline Drawing The following figure illustrates the TO-247 package drawing for the MSC015SMA120B4 device. The dimensions in the figure below are in millimeters and (inches). Figure 14 • Package Outline Drawing The following table shows the TO-247 4-lead dimensions and should be used in conjunction with the
050-7764 MSC015SMA070B4 Datasheet Revision A 8 The following table shows the TO-247 4-lead dimensions and should be used in conjunction with the package outline drawing. Table 6 • TO-247-4L Dimensions Symbol Min (mm) Max (mm) Min (in.) Max (in.) A 4.90 5.17 0.193 0.204 B 1.85 2.11 0.073 0.083 C 2.25 2.51 0.089 0.099 D 0.55 0.68 0.022 0.027 E 5.49 5.74 0.216 0.226 F 3.56 3.66 0.140 0.144 G 6.15 BSC 0.242 BSC H 20.83 21.08 0.820 0.830 I 19.81 20.32 0.780 0.800 J 1.07 1.33 0.042 0.052 K 15.77 16.03 0.621 0.631 L 13.89 14.15 0.547 0.557 M 16.25 16.85 0.640 0.663 N 2.00 2.75 0.079 0.108 O 7.10 7.50 0.280 0.295 P 2.87 BSC 0.113 BSC Q 5.08 BSC 0.200 BSC R 2.54 BSC 0.100 BSC Terminal 1 Drain Terminal 2 Source Terminal 3 Source sense Terminal 4 Gate Terminal 5 Drain
050-7764 MSC015SMA070B4 Datasheet Revision A 9 Microsemi Headquarters One Enterprise, Aliso Viejo, CA 92656 USA Within the USA: +1 (800) 713-4113 Outside the USA: +1 (949) 380-6100 Sales: +1 (949) 380-6136 Fax: +1 (949) 215-4996 Email: sales.support@microsemi.com www.microsemi.com © 2019 Microsemi. All rights reserved. Microsemi and the Microsemi logo are trademarks of Microsemi Corporation. All other trademarks and service marks are the property of their respective owners. Microsemi makes no warranty, representation, or guarantee regarding the information contained herein or the suitability of its products and services for any particular purpose, nor does Microsemi assume any liability whatsoever arising out of the application or use of any product or circuit. The products sold hereunder and any other products sold by Microsemi have been subject to limited testing and should not be used in conjunction with mission-critical equipment or applications. Any performance specifications are believed to be reliable but are not verified, and Buyer must conduct and complete all performance and other testing of the products, alone and together with, or installed in, any end-products. Buyer shall not rely on any data and performance specifications or parameters provided by Microsemi. It is the Buyer's responsibility to independently determine suitability of any products and to test and verify the same. The information provided by Microsemi hereunder is provided "as is, where is" and with all faults, and the entire risk associated with such information is entirely with the Buyer. Microsemi does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other IP rights, whether with regard to such information itself or anything described by such information. Information provided in this document is proprietary to Microsemi, and Microsemi reserves the right to make any changes to the information in this document or to any products and services at any time without notice. Microsemi, a wholly owned subsidiary of Microchip Technology Inc. (Nasdaq: MCHP), offers a comprehensive portfolio of semiconductor and system solutions for aerospace & defense, communications, data center and industrial markets. Products include high-performance and radiation-hardened analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and synchronization devices and precise time solutions, setting the world's standard for time; voice processing devices; RF solutions; discrete components; enterprise storage and communication solutions; security technologies and scalable anti-tamper products; Ethernet solutions; Power-over-Ethernet ICs and midspans; as well as custom design capabilities and services. Microsemi is headquartered in Aliso Viejo, California, and has approximately 4,800 employees globally. Learn more at www. microsemi.com. 050-7764 | December 2019 | Released