MSB92ASWT1G ONSEMI | Alldatasheet

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  • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TA = 25°C) Rating Symbol Value Unit Collector-Base Voltage V(BR)CBO −300 Vdc Collector-Emitter Voltage V(BR)CEO −300 Vdc Emitter-Base Voltage V(BR)EBO −5.0 Vdc Collector Current − Continuous IC 500 mAdc Electrostatic Discharge ESD HBM/C011716,000, MM/C01172,000 V THERMAL CHARACTERISTICS Rating Symbol Max Unit Power Dissipation (Note 1) PD 150 mW Junction Temperature TJ 150 °C Storage Temperature Range Tstg −55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint. Device Package Shipping †

ORDERING INFORMATION

MSB92ASWT1G SC −70 (Pb−Free) 3000/Tape & Reel http://onsemi.com MSB92AS1WT1G SC −70 (Pb−Free) 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. SC−70 (SOT−323) CASE 419 STYLE 3 MARKING DIAGRAM Dx = Device Code M = Date Code* /C0071= Pb−Free Package D3 M /C0071 /C0071 (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. D5 M /C0071 /C0071 MSB92ASWT1G MSB92AS1WT1G

MSB92ASWT1G, MSB92AS1WT1G http://onsemi.com

ELECTRICAL CHARACTERISTICS

Characteristic Symbol Min Max Unit Collector-Emitter Breakdown Voltage (IC = −1.0 mAdc, IB = 0) V(BR)CEO −300 − Vdc Collector-Base Breakdown Voltage (IC = −100 /C0109Adc, IE = 0) V(BR)CBO −300 − Vdc Emitter-Base Breakdown Voltage (IE = −100 /C0109Adc, IE = 0) V(BR)EBO −5.0 − Vdc Collector-Base Cutoff Current (VCB = 300 Vdc, IE = 0) ICBO − −0.25 /C0109A Emitter−Base Cutoff Current (VEB = −3.0 Vdc, IB = 0) IEBO − −0.1 /C0109A DC Current Gain (Note 2) (VCE = −10 Vdc, IC = −1.0 mAdc) (VCE = −10 Vdc, IC = −10 mAdc) (VCE = −10 Vdc, IC = −30 mAdc) hFE1 hFE2 hFE3 120 200 Collector-Emitter Saturation Voltage (Note 2) (IC = −20 mAdc, IB = −2.0 mAdc) VCE(sat) − −0.5 Vdc Base−Emitter Saturation Voltage (IC = −20 mAdc, IB = −2.0 mAdc) VBE(sat) − −0.9 Vdc SMALL SIGNAL CHARACTERISTICS Current−Gain − Bandwidth Product (IC = −10 mAdc, VCE = −20 Vdc, f = 20 MHz) fT 50 − MHz Collector−Base Capacitance (VCB = −20 Vdc, IE = 0, f = 1.0 MHz) Ccb − 6.0 pF 2. Pulse Test: Pulse Width ≤ 300 /C0109s, D.C. ≤ 2%.

MSB92ASWT1G, MSB92AS1WT1G http://onsemi.com PACKAGE DIMENSIONS SC−70 (SOT−323) CASE 419−04 ISSUE N 1.9 0.075 0.65 0.025 0.65 0.025 0.9 0.035 0.7 0.028 /C0466mm inches/C0467SCALE 10:1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. SOLDERING FOOTPRINT* STYLE 3: PIN 1. BASE 2. EMITTER 3. COLLECTOR A A2 D b e E c L NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 0.05 (0.002) HE DIM A MIN NOM MAX MIN MILLIMETERS 0.80 0.90 1.00 0.032 INCHES A1 0.00 0.05 0.10 0.000 A2 0.70 REF b 0.30 0.35 0.40 0.012 c 0.10 0.18 0.25 0.004 D 1.80 2.10 2.20 0.071 E 1.15 1.24 1.35 0.045 e 1.20 1.30 1.40 0.047 0.035 0.040 0.002 0.004 0.014 0.016 0.007 0.010 0.083 0.087 0.049 0.053 0.051 0.055 NOM MAX L e1 0.65 BSC 0.38

0.028 REF

0.026 BSC

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. MSB92ASWT1/D PUBLICATION ORDERING INFORMATION N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5773−3850 LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative