MSB7N80 BWTECH | Alldatasheet
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MSB7N80 800V N-Channel MOSFET ©Bruckewell Technology Corporation Rev. A -2013 GENERAL DESCRIPTION This Power MOSFET is produced using the advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies, active power factor correction, and electronic lamp ballasts based on half bridge topology. FEATURES • RDS(on) (typ 1.3 Ω )@VGS=10V • Gate Charge (Typical 39nC) • Improved dv/dt Capability, High Ruggedness • 100% Avalanche Tested • Maximum Junction Temperature Range (150°C) Absolute Maximum Ratings (Tc=25°C unless otherwise specified) Symbol Parameter Value Unit VDSS Drain-Source Voltage 800 V Drain Current -Continuous (TC=25℃) 7 A ID Drain Current -Continuous (TC=100℃) 5.0 A IDM Drain Current -Pulsed 32 A VGS Gate-Source Voltage ±30 V EAS Single Pulsed Avalanche Energy 850 mJ EAR Repetitive Avalanche Energy 17.8 mJ dv/dt Peak Diode Recovery dv/dt 4.5 V/ns Power Dissipation (TC=25℃) 59 W PD - Derate above 25℃ 0.48 W/℃ TJ,TSTG Operating and Storage Temperature Range –55 to + 150 ℃ TL Maximum lead temperature for soldering purposes, 1/8'' from case for 5 seconds 300 ℃ • Drain current limited by maximum junction temperature
MSB7N80 800V N-Channel MOSFET ©Bruckewell Technology Corporation Rev. A -2013 IGSSR Gate-Body Leakage Current, Reverse VGS=-30V , VDS=0 V –– –– –100 nA Dynamic Characteristics Ciss Input Capacitance –– 1700 –– pF Coss Output Capacitance –– 140 –– pF Crss Reverse Transfer Capacitance VDS=25V, VGS=0V, f=1.0MHz –– 15 –– pF Switching Characteristics td(on) Turn-On Time –– 50 -- ns tr Turn-On Rise Time –– 100 -- ns td(off) Turn-Off Delay Time –– 70 -- ns tf Turn-Off Fall Time VDS=400 V, ID=7.0A, RG=25Ω –– 70 -- ns Qg Total Gate Charge –– 37 -- nC Qgs Gate-Source Charge –– 11 –– nC Qgd Gate-Drain Charge VDS=640V,ID=7.0A, VGS=10 V –– 15 –– nC
MSB7N80 800V N-Channel MOSFET ©Bruckewell Technology Corporation Rev. A -2013
MSB7N80 800V N-Channel MOSFET ©Bruckewell Technology Corporation Rev. A -2013 Fig 12. Resistive Switching Test Circuit & Waveforms Fig 13. Gate Charge Test Circuit & Waveform Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
MSB7N80 800V N-Channel MOSFET ©Bruckewell Technology Corporation Rev. A -2013 Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
MSB7N80 800V N-Channel MOSFET ©Bruckewell Technology Corporation Rev. A -2013 Package Dimensions Dimensions in Millimeters
MSB7N80 800V N-Channel MOSFET ©Bruckewell Technology Corporation Rev. A -2013