MSB310 DGNJDZ | Alldatasheet
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Item Symbol Unit Conditions Repetitive Peak Reverse Voltage VRRM V 10 Average Rectified Output Current IO A 60 Hz sine wave, R-load, Ta=100℃ On alumina substrate Surge(Non-repetitive)Forward Current IFSM A sine wav e, 1 cycle, Tj=2 Current Squared Time I2t A2S 1ms≤t< 8.3ms Tj=25℃，Rating of per diode Operation Junction and Storage Temperature Range TJ,Tstg ℃ -55 ~+150 V 700V RMS Maximum RMS Voltage 8.3ms Item S ymbol Unit Test Condition Maximum Peak Forward Voltage VFM V IFM= .0A, Pulse measurement, Rating of per diode Maximum Peak Reverse Current IRRM1 μA VRM=VRRM , Pulse measurement, Rating of per diode 5.0 RθJ-A Between junction and ambient, On alumina substrate 55 T hermal Resistance RθJ-L ℃/W Betw een junction and lead 15 Electrical Characteristics (T=25℃ Unless otherwise specified） RθJ-C Bet ween junction and case 10 Maximum DC Blocking Voltage VDC V Max 500 Plastic-Encapsulate Bridge Rectifier IRRM2 μA TA=25℃ TA=125℃ Measured with IF=0.5A,IR=1A,IRR=0.25ATRR nsMaximum Reverse Recovery Time (3) (2) (1) (4) (1) (2) (3) (4) MSB310 MSB310 MSB MSB310 3.0 0.98 DONGGUAN NANJING ELECTRONICS LTD., D ongguan Nanjing Electronics Ltd. www.dgnjdz.com1/3 All data s heet.com
T ypical Characteristics Io( Ta(℃ ) VF( IF (A) IFSM (A) FI G.2:MAXIMU M NON-REPETITIVE FORWARD SURGE CURRENT FI G.3: TYPICAL FORWARD CHARACTERISTICS FI G.4:TYPICAL REVERSE CHARACTERISTICS Number of Cycles 0.01 1.0 100 Voltage(%) IR(uA) 1000 - + JBSL 50 1000 150 5.0 4.0 3.0 2.0 1.0 RESISTIVE OR INDUCTIVE LOADS 10 100 100 120 2 50205 PULSE WIDTH 8.3ms SINGLE HALF-SINE-WAVE 0.1 0.01 1.0 1.8 TJ = 25°C PULSE WIDTH 300us 0 20 40 60 80 100 120 140 TJ=150°C TJ=125°C TJ=100°C TJ=25°C D ongguan Nanjing Electronics Ltd. www.dgnjdz.com2/3 All data s heet.com
D imensions in inches and (millimeters) UMSB UMSB 79(2.00) 71(1.80) 80(7.10) 60(9.15) D ongguan Nanjing Electronics Ltd. www.dgnjdz.com3/3 All data s heet.com