MSB30M HDSEMI | Alldatasheet
Document overview
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Technical content
Features
o
- VRRM 1000V
- High surge current capability
Applications
Polarity: Color band denotes cathode Glass passivated chip ● MB30M H igh Diode Semiconductor DBF Plastic-Encapsulate Bridge Rectifier General purpose 1 phase Bridge rectifier applications DBF MSB30M Item Symbol Unit Conditions MSB30M Repetitive Peak Reverse Voltage V RRM V Average Rectified Output Current I O A 60Hz sine wave, R-load, Tc=110℃ Surge(Non- repetitive)Forward Current I FSM A 60H Z sine wave, 1 cycle, T j =25℃ Current Squared Time I t A S 1ms≤t<8.3ms Tj=25℃，Rating of per diode 33 Storage Temperature T stg -55 ~+150 Junction Temperature T j -55 ~+150
Electrical Characteristics
a =25℃ Unless otherwise specified） Item Symbol Unit Test Condition Max Peak Forward Voltage V FM V I FM =1.5A, Pulse measurement, Rating of per diode 1.1 Peak Reverse Current I RRM μA V RM RRM , Pulse measurement, Rating of per diode Tj=25℃ Tj=125℃ 100 Thermal Resistance R θ J-A ℃/W Between junction and ambient 55 R θ J-L Between junction and lead 15 R θ J-C Between junction and case 10 1000
H igh Diode Semiconductor 0.5 Io(A) Tc( FIG1:Io-Tc Curve 16040 80 120 1.0 1.5 2.0 2.5 3.0 0.01 0.02 0.05 VF(V) IF(A) FIG3: Forward Voltage 0.1 0.5 Ta=25 0 20 40 60 80 100 0.01 0.1 1.0 100 Voltage(%) IR(uA) Tj=125 Tj=25 FIG4:Typical Reverse Characteristics IFSM(A) 2 5 10 20 50 100 sine wave non-repetitive Tj=25 FIG2:Surge Forward Current Capadility Number of Cycles 8.3ms 1cycle IFSM 8.3ms 105
H igh Diode Semiconductor DBF DBF .339(8.60) .311(7.90) .205(5.20) .197(5.00) .256(6.70) .264(6.50) .291(7.40) .283(7.20) .059(1.50) .051(1.30) .016(0.40) .011(0.27) .045(1.15) .037(0.95) .041(1.05) .028(0.70) .122(3.10) .114(2.90) .003(0.08) .002(0.04) .079(2.00) .071(1.80) .280(7.10 .360(9.15) Dimensions in inches and (millimeters)