MSB12A45S2L GOOD-ARK | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
Features
³Low thermal resistance ³ Low forward voltage drop,low power loss ³Compact outline design ³ Excellent anti-humidity ³ High current capability ³ High forward surge capability internal schematic diagram ³ RoHS compliance Mechanical Data Case: plastic body Terminals: Sn plated leads Typical Applications ³ For use in solar cell junction box as bypass diodes for protection, using DC forward current Dimensions in millimeters without reverse bias. Maximum Ratings & Electrical Characteristics Ratings at 25¥ ambient temperature unless otherwise specified Symbol Unit VRRM V VRwM V IF IFSM IRRM (Max) mA VFM (Max) V Rθjc ¥/W Tstg ¥ VISO V g TJ 0.8 0.45 1.0 Ē55 to+125 200 Isolation voltage AC. 1minute Operating junction temperature range(VR80%VRRM) Typical thermal resistance (junction to case,with heatsink) Bypass Diode Module for Solarcell MSB12A45S2L 400 (Schottky Barrier Diode Type) Parameter Maximum repetitive peak reverse voltage MSB12A45S2L Working peak reverse voltage A Repetitive peak reverse current (VR=VRRM) 12DC output current (Tc=145¥,with special heatsink) surge forward current 1cycle,60HZ,peak value,non- titi Forward voltage drop IF=12A,lnst measurement Junction temperature in DC forward current without reverse bias Mass (typical value) Storage temperature Ē55 to+150 6000 Outline Drawing 1"(&
Ratings & Characteristics Curves (Ta=25¥ unless otherwise noted ) Notes: Using DC forward current Mounted on junction box 'PSXBSE$VSSFOU%FSBUJOH $BTF5FNQFSBUVSF ¥ %$'PSXBSE$VSSFOU " ¥ 5ZQJDBM XJUIIFBUTJOL 5ZQJDBM'PSXBSE$IBSBDUFSJTUJDT *OTUBOUBOFPVT'PSXBSE7PMUBHF 7 *OTUBOUBOFPVT'PSXBSE $VSSFOU " 5ZQJDBM3FWFSTF$IBSBDUFSJTUJDT 1FSDFOUPG3BUFE1FBL3FWFSTF7PMUBHF *OTUBOUBOFPVT3FWFSTF $VSSFOU N" 1"(&