MSAGX60F60A MICROSEMI | Alldatasheet

Document overview

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Technical content

Features

  • Rugged polysilicon gate cell structure
  • high current handling capability, latch-proof
  • Hermetically sealed, surface mount power package
  • Low package inductance
  • Very low thermal resistance
  • Reverse polarity available upon request: MSAH(G)60F60B
  • high frequency IGBT, low switching losses
  • anti-parallel FREDiode (MSAHX60F60A only) DESCRIPTION SYMBOL MAX. UNIT Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter) @ TJ ≥ 25°C BVCES 600 Volts Collector-to-Gate Breakdown Voltage @ TJ ≥ 25°C, RGS= 1 MΩ BVCGR 600 Volts Continuous Gate-to-Emitter Voltage VGES +/-20 Volts Transient Gate-to-Emitter Voltage VGEM +/-30 Volts Continuous Collector Current Tj= 25°C Tj= 90°C IC25 IC90 Amps Peak Collector Current, pulse width limited by Tjmax, ICM 120 Amps Safe Operating Area (RBSOA) @ VGE= 15V, L= 100µH (clamped inductive load), RG= 4.7Ω , Tj= 125°C, VCE= 0.8 x VCES Imax 64 Amps Power Dissipation PD 300 Watts Junction Temperature Range Tj -55 to +150 °C Storage Temperature Range Tstg -55 to +150 °C Continuous Source Current (Body Diode, MSAHX60F60A only) IS 32 Amps Pulse Source Current (Body Diode, MSAHX60F60A only) ISM 100 Amps Thermal Resistance, Junction to Case θJC 0.4 °C/W Maximum Ratings @ 25°°C (unless otherwise specified) Mechanical Outline Datasheet# MSC0298A 2830 S. Fairview St. Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256 N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR COLLECTOR EMITTER (MS…A) GATE (MS…B) .A) EMITTER (MS…B)

DESCRIPTION SYMBOL CONDITIONS MIN TYP. MAX UNIT Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter) BVCES VGS = 0 V, IC = 250 µA 600 V Gate Threshold Voltage VGE(th) VCE = VGE, IC = 250 µA 2.5 5.0 V Gate-to-Emitter Leakage Current IGES VGE = ± 20VDC, VCE = 0 TJ = 25°C TJ = 125°C ±100 ±200 nA Collector-to-Emitter Leakage Current (Zero Gate Voltage Collector Current) ICES VCE =0.8•BVCES TJ = 25°C VGE = 0 V TJ = 125°C 200 1000 µA Collector-to-Emitter Saturation Voltage (1) VCE(sat) VGE= 15V, IC= 30A TJ = 25°C IC= 60A TJ = 25°C IC= 30A TJ = 125°C 2.2 3.5 2.2 2.9 V Forward Transconductance (1) gfs VCE ≥ 10 V; IC = 30 A 15 20 S Input Capacitance Output Capacitance Reverse Transfer Capacitance Cies Coes Cres VGE = 0 V, VCE = 25 V, f = 1 MHz 2500 230 pF INDUCTIVE LOAD, Tj= 25°°C Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Off Energy td(on) tri td(off) tfi Eoff VGE = 15 V, VCE = 480 V, IC = 30 A, RG = 4.7 Ω , L= 100 µH note 2, 3 175 125 1.3 175 ns ns ns ns mJ INDUCTIVE LOAD, Tj= 125°°C Turn-on Delay Time Rise Time On Energy Turn-off Delay Time Fall Time Off Energy td(on) tri Eon td(off) tfi Eoff VGE = 15 V, VCE = 480 V, IC = 30 A, RG = 4.7 Ω , L= 100 µH note 2, 3 250 260 ns ns mJ ns ns mJ Total Gate Charge Gate-to-Emitter Charge Gate-to-Collector (Miller) Charge Qg Qge Qgc VGE = 15 V, VCE = 300V, IC = 30A 125 150 nC Antiparallel diode forward voltage (MSAHX60F60A only) VF IE= 15 A TJ = 25 °C IE= 15 A TJ = 150 °C IE= 30 A TJ = 25 °C IE= 50 A TJ = 25 °C 1.7 1.9 1.5 1.3 V V V V Antiparallel diode reverse recovery time (MSAHX60F60A only) trr IE= 10 A, dIE/dt= 100 A/us, TJ= 25°C IE= 30 A, dIE/dt= 100 A/us, TJ= 25°C 140 100 ns ns Antiparallel diode reverse recovery charge (MSAHX60F60A only) Qrr IE= 10 A, dIE/dt= 100 A/us, TJ= 25°C IE= 30 A, dIE/dt= 100 A/us, TJ= 25°C 160 320 nC nC Antiparallel diode peak recovery current (MSAHX60F60A only) IRM IE= 10 A, dIE/dt= 100 A/us, TJ= 25°C IE= 30 A, dIE/dt= 100 A/us, TJ= 25°C 4.2 A A Electrical Parameters @ 25°°C (unless otherwise specified) Notes (1) Pulse test, t ≤≤ 300 µµs, duty cycle δδ ≤≤ 2% (2) switching times and losses may increase for larger VCE and/or RG values or higher junction temperatures. (3) switching losses include “tail” losses (4) Microsemi Corp. does not manufacture the igbt die; contact company for details. MSAGX60F60A MSAHX60F60A