MSAGA11F120D MICROSEMI | Alldatasheet

Document overview

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Technical content

MSC0947.PDF 2/5/99 All Ratings: Device Packaged in TO-3 or Microsemi CoolPack Package, TC = 25°C unless otherwise specified DESCRIPTION:

  • N-Channel enhancement mode high density IGBT die
  • Passivation: Polyimide, 20 um, over Silicon Nitride, .8um
  • Emitter Metallization: Al/1%Si for aluminum wire bonding, 3.2 um typical.
  • Collector/Gate Metallization: Ti – Ni (1 um) – Ag (0.2 um) for soft solder attach FEATURES:
  • Low Forward Voltage Drop, Low Tail Current
  • Avalanche and Surge Rated
  • High Freq. Switching to 20KHz
  • Ultra Low Leakage Current
  • RBSOA and SCSOA Rated
  • Available with Lot Acceptance Testing Spec MSAGA11F120DL, "-L" Suffix MAXIMUM RATINGS: STATIC ELECTRICAL CHARACTERISTICS: 2830 S. Fairview Street Santa Ana, CA 92704 Phone: (714) 979-8220 Fax: (714) 559-5989 SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 1200 Volts VCGR Collector-Gate Voltage (R GE = 20KW) 1200 Volts VEG Emitter-Collector Voltage 15 Volts VGE Gate-Emitter Voltage ±20 Volts IC1 Continuous Collector Current @ TC = 25°C 22 Amps IC2 Continuous Collector Current @ TC = 110°C 11 Amps ICM Surge Current (10ms x 4ms double exponential, see figure 2) 55 Amps ICM1 Pulsed Collector Current ¬ @ TC = 25°C 44 Amps ICM2 Pulsed Collector Current ¬ @ TC = 110°C 22 Amps ICsurge2 Surge Current: tp= 2 us (ton= 1.5 ms; toff= 0.5 ms to 50% decay), 10 pulses, duty cycle= 1:2,500,000 (12 pulses/minute)

400 Apk

EAS Single Pulse Avalanche Energy ­ 10 mJ PD Total Power Dissipation 125 Watts TJ, TSTG Operating and Storage: Junction Temperature Range -55 to 150 °C MSAGA11F120D Fast IGBT Die for Implantable Cardio Defibrillator

Applications

Surge Current (ICM) - Amps 10µs x 4ms double exponential 10µs 4000µs Time - µsec 35-50% of ICM Max SYMBOL CHARACTERISTIC / TEST CONDITIONS MIN TYP MAX UNIT BVCES Collector-Emitter Breakdown Voltage (V GE = 0V, IC = 0.5mA) 1200 Volts RBVCES Collector-Emitter Reverse Breakdown Voltage ® (VGE = 20V, IC = 10mA) -15 Volts Gate Threshold Voltage (VCE = VGE, IC = 350mA, TJ = 37°C 5.7 Volts VGE(TH) Gate Threshold Voltage (VCE = VGE, IC = 350mA, TJ = 25°C 4.5 5.5 6.5 Volts VCE (ON) Collector-Emitter On Voltage (V GE = 15V, IC = IC2, TJ = 25°C) 3.1 3.5 Volts Collector-Emitter On Voltage (V GE = 15V, IC = IC2, TJ = 37°C) 3.5 Volts Collector-Emitter On Voltage (V GE = 15V, IC = IC2, TJ = 125°C) 4 4.5 Volts ICES Collector Cut-off Current (VCE = 80%VCES, VGE = 0V, TJ = 25°C) 0.02 10 uA Collector Cut-off Current (VCE = 80%VCES, VGE = 0V, TJ = 37°C) 0.07 uA Collector Cut-off Current (VCE = 80%VCES, VGE = 0V, TJ = 125°C) 1000 uA Gate-Emitter Leakage Current (V GE = ±25V, VCE =0V) 2 ±100 nA IGES Gate-Emitter Leakage Current (V GE = ±25V, VCE =0V), Tj= 37°C 4 nA

MSC0947.PDF 2/5/99 All Ratings: Device Packaged in TO-3 or Microsemi CoolPack Package, TC = 25°C unless otherwise specified DYNAMIC CHARACTERISTICS: ¬ Repetitive Rating: Pulse width limited by maximum junction temperature. ­ IC = IC2, VCC = 50V, RCE = 25W, L = 300mH, TJ = 25°C ® TJ = 150°C ¯ See MIL-STD-750 Method 3471 DIE PROBE PARAMETERS (100% TESTS): SYMBOL CHARACTERISTIC TEST CONDITIONS MIN TYP MAX UNIT Cies Input Capacitance VGE = 0V 600 720 pF Coes Output Capacitance VCE = 25V 60 120 pF Cros Reverse Transfer Capacitance f = 1 MHz 38 55 pF Qg Total Gate Charge ¯ VGE = 15V 60 nC Qge Gate-Emitter Charge VCC = 0.5VCES 4 nC Qgc Gate-Collector ("Miller") Charge IC = IC2 36 nC td (on) Turn-on Delay Time Resistive Switching (25 °C) 35 ns tr Rise Time VGE = 15V, VCC = 0.5VCES 120 ns td (off) Turn-off Delay Time IC = IC2 580 ns tf Fall Time Re = 150W 260 ns td (on) Turn-On Delay Time Inductive Switching (25 °C) 55 110 ns tr Rise Time VCLAMP(PEAK) = 0.5VCES 50 100 ns td (off) Turn-off Delay Time VGE = 15V, IC = IC2 380 570 ns tf Fall Time RG = 150W, TJ = +25°C 80 120 ns td (on) Turn-off Delay Time Inductive Switching (125 °C) 40 ns tr Rise Time VCLAMP(PEAK) = 0.5VCES 100 ns td (off) Turn-off Delay Time (tsv) (tsi) VGE = 15V, IC = IC2 550 700 ns tf Fall Time (tfv) (tfi) RG = 150W, TJ = +125°C 160 ns Eoff Turn-off Switching Energy 1 mJ gfe Forward Transconductance VCE =20V, IC = IC2 4.5 5 S SYMBOL CHARACTERISTIC / TEST CONDITIONS MIN TYP MAX UNIT BVCES Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 0.5mA) 1200 1400 Volts RBVCES Collector-Emitter Reverse Breakdown Voltage ® (VGE = 15V, IC = 10mA) -15 30 VGE(TH) Gate Threshold Voltage (VCE = 6.5 V, IC = 350mA, TJ = 25°C 4.6 5.5 6.5 VCE (ON) Collector-Emitter On Voltage (VGE = 12V, IC = 1 A, TJ = 25°C) 1.45 2.0 ICES Collector Cut-off Current (VCE = 1200 V, VGE = 0V, TJ = 25°C) 0.15 400 uA IGES Gate-Emitter Leakage Current (VGE = ±20 V, VCE =0V) 5 ±120 nA MSAGA11F120D Fast IGBT Die for Implantable Cardio Defibrillator

MSC0947.PDF 2/5/99 All Ratings: Device Packaged in TO-3 or Microsemi CoolPack Package, TC = 25°C unless otherwise specified MECHANICAL CHARACTERISTICS TYPICAL SURGE PERFORMANCE Surge Current (ICM) - Amps 10µs x 4ms double exponential 10µs 4000µs Time - µsec 35-50% of ICM Max