MSAFA1N100D MICROSEMI | Alldatasheet

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Technical content

MSC1054.PDF 6/23/99 All Ratings: Device Packaged in TO-3 or Microsemi CoolPack Package, T C = 25 °C unless otherwise specified MSAFA1N100D Fast MOSFET Die for Implantable Cardio Defibrillator

Applications

DESCRIPTION:

  • N-Channel enhancement mode high density MOSFET die
  • Passivation: oxynitride, 4um
  • Frontside (top) Metallization: Al/1%Cu for aluminum wire bonding, 9 um typical.
  • Backside Metallization: Ti – Ni (1 um) – Ag (0.2 um) for soft solder attach FEATURES:
  • Low On-state resistance
  • Avalanche and Surge Rated
  • High Freq. Switching
  • Ultra Low Leakage Current
  • UIS rated
  • Available with Lot Acceptance Testing Spec MSAFA1N100DL, "-L" Suffix MAXIMUM RATINGS: STATIC ELECTRICAL CHARACTERISTICS: 2830 S. Fairview Street Santa Ana, CA 92704 Phone: (714) 979-8220 Fax: (714) 559-5989 SYMBOL PARAMETER VALUE UNIT VDSS Drain - Source Voltage 1000 Volts VGS Gate - Source Voltage ±20 Volts ID1 Continuous Drain Current @ T C = 25°° C 1 Amps ID2 Continuous Drain Current @ T C = 100°° C .8 Amps IDM1 Pulsed Drain Current ¬¬ @ TC = 25°° C 4 Amps IAR Avalanche Current 1 Amps EAR Repetitive Avalanche Energy TBD mJ EAS Single Pulse Avalanche Energy TBD mJ TJ, TSTG Operating and Storage: Junction Temperature Range -55 to 150 °° C SYMBO L CHARACTERISTIC / TEST CONDITIONS MIN TYP MAX UNIT BVDSS Drain - Source Breakdown Voltage (V GS = 0V, ID = 0.25mA) 1000 Volts VGS(TH)2 Gate Threshold Voltage (V GS= VDS, ID = 1 mA, TJ = 37°° C 3.4 Volts VGS(TH)1 Gate Threshold Voltage (V GS= VDS, ID = 1 mA, TJ = 25°° C 2 3.5 4.5 Volts RDS(ON)1 Drain – Source On-State Resistance (VGS = 10V, ID = ID1, TJ = 25°° C) 12.5 13.5 ohm RDS(ON)2 Drain – Source On-State Resistance (VGS = 7V, ID = 5…150 mA, TJ= 37°° C) 12.5 ohm RDS(ON)3 Drain – Source On-State Resistance (VGS = 7V, ID = 5…150 mA, TJ= 25°° C) 11.5 ohm RDS(ON)4 Drain – Source On-State Resistance (VGS = 7V, ID = 5…150 mA, TJ= 60°° C) 15 ohm RDS(ON)5 Drain – Source On-State Resistance (VGS = 7V, ID = ID1, TJ = 125°° C) 23.5 ohm IDSS1 Zero Gate Voltage Drain Current (V DS = 80%BVDSS, VGS = 0V, TJ = 25°° C) 10 uA IDSS2 Zero Gate Voltage Drain Current (V DS = 80%BVDSS, VGS = 0V, TJ = 37°° C) 1 uA IDSS3 Zero Gate Voltage Drain Current (V DS = 80%BVDSS, VGS = 0V, TJ = 125°° C) 100 uA IGSS1 Gate-Source Leakage Current (V GS = ±20V, VCE =0V) ±100 nA IGSS2 Gate-Source Leakage Current (V GS= ±20V VCE =0V), Tj= 37°°C 10 nA IGSS3 Gate-Source Leakage Current (V GS= ±20V VCE =0V), Tj= 125°°C 500 nA

MSC1054.PDF 6/23/99 All Ratings: Device Packaged in TO-3 or Microsemi CoolPack Package, T C = 25 °C unless otherwise specified MSAFA1N100D Fast MOSFET Die for Implantable Cardio Defibrillator DYNAMIC CHARACTERISTICS: ¬ Repetitive Rating: Pulse width limited by maximum junction temperature. ­ IC = IC2, VCC = 50V, RCE = 25ΩΩ , L = 300 µµH, TJ = 25°° C ® TJ = 150°° C ¯ See MIL-STD-750 Method 3471 DIE PROBE PARAMETERS (100% TESTS): SYMBOL CHARACTERISTIC TEST CONDITIONS MIN TYP MAX UNIT Ciss Input Capacitance VGS = 0V 290 350 pF Coss Output Capacitance VDS = 25V 36 45 pF Crss Reverse Transfer Capacitance f = 1 MHz 15 25 pF Qg Total Gate Charge ¯¯ VGS = 10V 20 nC Qgs Gate-Source Charge VDS = 0.5BVDSS 1 nC Qgd Gate-Drain ("Miller") Charge IC = 20 mA 10 nC td (on) Turn-on Delay Time Resistive Switching (25 °° C) 6.3 ns tr Rise Time VGS = 10V, VDS = 0.5BVDSS 5.9 ns td (off) Turn-off Delay Time ID = 20 mA 315 ns tf Fall Time Rg = 1.6ΩΩ 2.6 us td (on) Turn-On Delay Time Resistive Switching (25 °° C) 6.3 ns tr Rise Time VGS = 10V, VDS = 0.5BVDSS 5.8 ns td (off) Turn-off Delay Time ID = 100 mA 76 ns tf Fall Time Rg = 1.6ΩΩ 470 ns VSD Diode Forward Voltage VGS =0 V, IS = 1 A 1 V trr Reverse Recovery Time IS = 1 A, d IS / dt = 100 A/us 130 ns Qrr Reverse Recovery Charge IS = 1 A, d IS / dt = 100 A/us .7 uC SYMBOL CHARACTERISTIC / TEST CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage (V GS = 0V, IC = 0.25mA) 1000 Volts VGS(TH) Gate Threshold Voltage (V DS = VGS, IC = 1000µµA, TJ = 25°° C 2 4.5 RDS (ON) Drain-Source On-Resistance (V GS = 10V, IC = 1 A, TJ = 25°° C) 14 ohm IDSS Zero Gate Voltage Drain Current (V DS = 800 V, VGS = 0V, TJ = 25°° C) 25 uA IGSS Gate-Source Leakage Current (V GS = ±20 V, VDS =0V) ±100 nA

MSC1054.PDF 6/23/99 All Ratings: Device Packaged in TO-3 or Microsemi CoolPack Package, T C = 25 °C unless otherwise specified MSAFA1N100D Fast MOSFET Die for Implantable Cardio Defibrillator MECHANICAL CHARACTERISTICS VGS vs VDS vs ID 3.5 3.7 3.9 4.1 4.3 4.5 4.7 4.9 0.01 0.1 1 10 100 VDS(V) VGS(V) ID=100mA ID=50mA ID=10mA ID=1mA