MSAER12N50A MICROSEMI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
Features
- Ultrafast rectifier in parallel with the body diode (MSAE type only)
- Rugged polysilicon gate cell structure
- Increased Unclamped Inductive Switching (UIS) capability
- Hermetically sealed, surface mount power package
- Low package inductance
- Very low thermal resistance
- Reverse polarity available upon request DESCRIPTION SYMBOL MAX. UNIT Drain-to-Source Breakdown Voltage (Gate Shorted to Source) @ TJ ≥ 25°C BVDSS 500 Volts Drain-to-Gate Breakdown Voltage @ TJ ≥ 25°C, RGS= 1 MΩ BVDGR 500 Volts Continuous Gate-to-Source Voltage VGS +/-20 Volts Transient Gate-to-Source Voltage VGSM +/-30 Volts Continuous Drain Current Tj= 25°C Tj= 100°C ID25 ID100 Amps Peak Drain Current, pulse width limited by TJmax IDM 48 Amps Repetitive Avalanche Current IAR 12 Amps Repetitive Avalanche Energy EAR tbd mJ Single Pulse Avalanche Energy EAS 8 mJ Voltage Rate of Change of the Recovery Diode @ IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C dv/dt 3.5 V/ns Power Dissipation PD 300 Watts Junction Temperature Range Tj -55 to +150 °C Storage Temperature Range Tstg -55 to +150 °C Continuous Source Current (Body Diode) IS 12 Amps Pulse Source Current (Body Diode) ISM 48 Amps Thermal Resistance, Junction to Case θJC 0.4 °C/W Maximum Ratings @ 25°°C (unless otherwise specified) Mechanical Outline Datasheet# MSC0266B 2830 S. Fairview St. Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256 N-CHANNEL ENHANCEMENT MODE POWER MOSFET DRAIN SOURCE GATE
DESCRIPTION SYMBOL CONDITIONS MIN TYP. MAX UNIT Drain-to-Source Breakdown Voltage (Gate Shorted to Source) BVDSS VGS = 0 V, ID = 1000 µA 500 V Temperature Coefficient of the Drain-to-Source Breakdown Voltage ΔBVDSS/ΔTJ 0.78 V/°C Gate Threshold Voltage VGS(th) VDS = VGS, ID = 1 mA 2.0 4.0 V Gate-to-Source Leakage Current IGSS VGS = ± 20VDC, VDS = 0 TJ = 25°C TJ = 125°C ±100 ±200 nA Drain-to-Source Leakage Current (Zero Gate Voltage Drain Current) IDSS VDS =0.8•BVDSS TJ = 25°C VGS = 0 V TJ = 125°C 250 µA Static Drain-to-Source On-State Resistance (1) RDS(on) VGS= 10V, ID= 8A TJ = 25°C ID= 12A TJ = 25°C ID= 8A TJ = 125°C 0.800 0.400 0.500 Ω Forward Transconductance (1) gfs VDS ≥ 15 V; ID = 8 A 5.5 S Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss VGS = 0 V, VDS = 25 V, f = 1 MHz 2700 600 240 pF Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Td(on) tr td(off) tf VGS = 10 V, VDS = 250 V, ID = 12 A, RG = 2.35 Ω 190 170 130 ns Total Gate Charge Gate-to-Source Charge Gate-to-Drain (Miller) Charge Qg(on) Qgs Qgd VGS = 10 V, VDS = 250V, ID = 12A 55 120 nC Body Diode Forward Voltage (1) VSD IF = IS, VGS = 0 V MSAE MSAF 1.2 1.7 V Reverse Recovery Time (Body Diode) trr IF = 10 A, MSAE -di/dt = 100 A/µs, MSAF 1600 ns Reverse Recovery Charge Qrr IF = 10 A, MSAE di/dt = 100 A/µs, MSAF tbd µC Electrical Parameters @ 25°°C (unless otherwise specified) Notes (1) Pulse test, t ≤≤ 300 µµs, duty cycle δδ ≤≤ 2% (2) Microsemi Corp. does not manufacture the mosfet die; contact factory for details MSAER12N50A MSAFR12N50A