MSA2111 HP | Alldatasheet

Document overview

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Technical content

Features

  • Cascadable 50 Ω Gain Block
  • Medium Power: 10 dBm at 900 MHz
  • High Gain: 16.5 dB Typical at 900 MHz
  • Low Noise Figure: 3.3 dB Typical at 900 MHz
  • Low Cost Surface Mount Plastic Package
  • Tape-and-Reel Packaging Option Available[1] MSA-2111 SOT-143 PackageDescription The MSA-2111 is a low cost silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a surface mount plastic SOT-143 package. This MMIC is designed for use as a general purpose 50 Ω gain block. Typical applications include narrow and broad band IF and RF amplifiers in commercial and industrial applications. The MSA-series is fabricated using Agilent’s 10 GHz f T, 25 GHz fMAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metalli- zation to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. Typical Biasing Configuration C block C block R bias VCC > 5 V Vd = 3.6 V RFC (Optional) IN OUT MSA Note: 1. Refer to PACKAGING section “Tape- and-Reel Packaging for Semiconduc- tor Devices.”

Parameter Absolute Maximum [1] Device Current 40 mA Power Dissipation[2,3] 125 mW RF Input Power +13 dBm Junction Temperature 150 °C Storage Temperature –65 °C to 150°C Thermal Resistance[2]: θjc = 505°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. T CASE = 25°C. 3. Derate at 2.0 mW/ °C for TC > 85°C. Part Number Ordering Information Part Number No. of Devices Container MSA-2111-TR1 3000 7" Reel MSA-2111-BLK 100 Antistatic Bag For more information, see “Tape and Reel Packaging for Semiconductor Devices”. GP Power Gain (|S 21|2) f = 900 MHz dB 16.0 17.5 ΔGP Gain Flatness f = 0.1 to 0.3 GHz dB ±0.5 f3 dB 3 dB Bandwidth GHz 0.5 Input VSWR f = 0.1 to 2.5 GHz 1.8:1 Output VSWR f = 0.1 to 2.5 GHz 1.8:1 NF 50 Ω Noise Figure f = 900 MHz dB 3.3 P 1 dB Output Power at 1 dB Gain Compression f = 900 MHz dBm 10 IP3 Third Order Intercept Point f = 900 MHz dBm 20 tD Group Delay f = 900 MHz psec 158 Vd Device Voltage V 2.9 3.6 4.3 dV/dT Device Voltage Temperature Coefficient mV/ °C –8.0 Notes: 1. The recommended operating current range for this device is 12 to 35 mA. Typical gain performance as a function of current is on the following page. Electrical Specifications[1], TA = 25°C Symbol Parameters and Test Conditions: I d = 29 mA, ZO = 50 Ω Units Min. Typ. Max. VSWR

Figure 1. Power Gain vs. Frequency, Figure 2. Power Gain vs. Current. Figure 3. Output Power at 1 dB Gain Figure 4. Noise Figure vs. Frequency,

3.0 NF (dB)

0.1 GHz

0.5 GHz

0.9 GHz

2.0 GHz

www.semiconductor.agilent.com Data subject to change. Copyright © 1999 Agilent Technologies Obsoletes 200640 5965-9663E (11/99) DIMENSIONS ARE IN MILLIMETERS (INCHES) 0.10 (0.004) 0.013 (0.0005) 0.92 (0.036) 0.78 (0.031) GROUND RF INPUT RF OUTPUT AND BIAS XXX PACKAGE MARKING CODE 1.40 (0.055) 1.20 (0.047) 2.65 (0.104) 2.10 (0.083) 0.54 (0.021) 0.37 (0.015) 0.60 (0.024) 0.45 (0.018) 2.04 (0.080) 1.78 (0.070) 3.06 (0.120) 2.80 (0.110) 0.15 (0.006) 0.09 (0.003) 1.02 (0.041) 0.85 (0.033) 0.69 (0.027) 0.45 (0.018) GROUND A06