MSA-1105 HP | Alldatasheet

Document overview

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Technical content

Features

  • High Dynamic Range Cascadable 50␣Ω or 75␣Ω Gain Block
  • 3␣ dB Bandwidth: 50␣ MHz to 1.3␣ GHz
  • 17.5 dBm Typical P 1␣ dB at 0.5␣ GHz
  • 3.6␣ dB Typical Noise Figure at 0.5␣ GHz
  • Surface Mount Plastic Package
  • Tape-and-Reel Packaging Option Available[1] MSA-1105

05 Plastic PackageDescription

The MSA-1105 is a high perfor- mance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a low cost, surface mount plastic package. This MMIC is designed for high dynamic range in either 50 or 75␣Ω systems by combining low noise figure with high IP 3. Typical applications include narrow and broadband linear amplifiers in commercial and industrial systems. The MSA-series is fabricated using HP’s 10 GHz fT, 25␣ GHz fMAX silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metalli- zation to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. Typical Biasing Configuration C block C block R bias VCC > 8 V Vd = 5.5 V RFC (Optional) IN OUT MSA Note: 1. Refer to PACKAGING section “Tape- and-Reel Packaging for Semiconduc- tor Devices.” 5965-9557E

Parameter Absolute Maximum [1] Device Current 80 mA Power Dissipation[2,3] 550 mW RF Input Power +13 dBm Junction Temperature 150 °C Storage Temperature –65 to 150 °C Thermal Resistance[2,4]: θjc = 125°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. T CASE = 25°C. 3. Derate at 8 mW/°C for TC > 124°C. 4. See MEASUREMENTS section “Thermal Resistance” for more information. GP Power Gain (|S21|2) f = 0.05 GHz dB 12.7 f = 0.5 GHz dB 10.0 12.0 f = 1.0 GHz dB 10.5 Δ GP Gain Flatness f = 0.1 to 1.0 GHz dB ± 1.0 f3 dB 3 dB Bandwidth[2] GHz 1.3 Input VSWR f = 0.1 to 1.0 GHz 1.5:1 Output VSWR f = 0.1 to 1.0 GHz 1.7:1 NF 50 Ω Noise Figure f = 0.5 GHz dB 3.6 P1 dB Output Power at 1 dB Gain Compression f = 0.5 GHz dBm 17.5 IP3 Third Order Intercept Point f = 0.5 GHz dBm 30.0 tD Group Delay f = 0.5 GHz psec 200 Vd Device Voltage V 4.4 5.5 6.6 dV/dT Device Voltage Temperature Coefficient mV/ °C –8.0 Notes: 1. The recommended operating current range for this device is 40 to 70 mA. Typical performance as a function of current is on the following page. 2. Referenced from 50 MHz gain (GP). Electrical Specifications[1], TA = 25°C Symbol Parameters and Test Conditions: I d = 60 mA, ZO = 50 Ω Units Min. Typ. Max. VSWR Part Number Ordering Information Part Number No. of Devices Container MSA-1105-TR1 500 7" Reel MSA-1105-STR 10 Antistatic Bag For more information, see “Tape and Reel Packaging for Semiconductor Devices”.

05 Plastic Package Dimensions

A 0.030 0.89 0.100 – 0.010 2.54 – 0.25 0.135 – 0.015 3.42 – 0.25 (4 PLCS) 1 3 0.008 – 0.002 0.20 – 0.05 0.0005 – 0.010 (0.013 – 0.25) 0.050 1.27 GROUND RF INPUT RF OUTPUT AND DC BIAS GROUND 0.030 0.76 0.030 0.76 0.145 3.68 0.020 0.51 DIA 0.030 – 0.010 0.76 – 0.25 (4 PLCS) Notes: (unless otherwise specified) 1. Dimensions are in 2. Tolerances in .xxx = – 0.005 mm .xx = – 0.13 mm