MSA-0786 HP | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

Features

  • Cascadable 50 Ω Gain Block
  • Low Operating Voltage:

4.0 V Typical Vd

  • 3 dB Bandwidth: DC to 2.0 GHz
  • 12.5␣ dB Typical Gain at 1.0␣ GHz
  • Unconditionally Stable (k>1)
  • Surface Mount Plastic Package
  • Tape-and-Reel Packaging Option Available[1] MSA-0786

86 Plastic PackageDescription

The MSA-0786 is a high perfor- mance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a low cost, surface mount plastic package. This MMIC is designed for use as a general purpose 50 Ω gain block. Applications include narrow and broad band IF and RF amplifiers in commercial and industrial applications. The MSA-series is fabricated using HP’s 10 GHz f T, 25␣ GHz fMAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metalli- Typical Biasing Configuration C block C block R bias VCC > 5 V Vd = 4.0 V RFC (Optional) IN OUT MSA Note: 1. Refer to PACKAGING section “Tape- and-Reel Packaging for Semiconduc- tor Devices.” zation to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. 5965-9594E

Parameter Absolute Maximum [1] Device Current 60 mA Power Dissipation[2,3] 275 mW RF Input Power +13 dBm Junction Temperature 150 °C Storage Temperature –65 to 150 °C Thermal Resistance[2,4]: θjc = 120°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. T CASE = 25°C. 3. Derate at 8.3 mW/°C for TC > 117°C. 4. See MEASUREMENTS section “Thermal Resistance” for more information. Part Number Ordering Information Part Number No. of Devices Container MSA-0786-TR1 1000 7" Reel MSA-0786-BLK 100 Antistatic Bag For more information, see “Tape and Reel Packaging for Semiconductor Devices”. GP Power Gain (|S21|2) f = 0.1 GHz dB 13.5 f = 1.0 GHz 10.5 12.5 ΔGP Gain Flatness f = 0.1 to 1.3 GHz dB ± 0.7 f3 dB 3 dB Bandwidth GHz 2.0 Input VSWR f = 0.1 to 2.5 GHz 1.7:1 Output VSWR f = 0.1 to 2.5 GHz 1.7:1 NF 50 Ω Noise Figure f = 1.0 GHz dB 5.0 P1 dB Output Power at 1 dB Gain Compression f = 1.0 GHz dBm 2.0 IP3 Third Order Intercept Point f = 1.0 GHz dBm 19.0 tD Group Delay f = 1.0 GHz psec 150 Vd Device Voltage V 3.2 4.0 4.8 dV/dT Device Voltage Temperature Coefficient mV/ °C –7.0 Note: 1. The recommended operating current range for this device is 15 to 40 mA. Typical performance as a function of current is on the following page. Electrical Specifications[1], TA = 25°C Symbol Parameters and Test Conditions: I d = 22 mA, ZO = 50 Ω Units Min. Typ. Max. VSWR

86 Plastic Package Dimensions

0.51 – 0.13 (0.020 – 0.005) 2.34 – 0.38 (0.092 – 0.015) 2.67 – 0.38 (0.105 – 0.15) 1 3 2.16 – 0.13 (0.085 – 0.005) DIMENSIONS ARE IN MILLIMETERS (INCHES) 1.52 – 0.25 (0.060 – 0.010) 0.66 – 0.013 (0.026 – 0.005) 0.203 – 0.051 (0.006 – 0.002)

0.30 MIN

(0.012 MIN) CL 45° 5° TYP. 8° MAX 0° MIN GROUND RF INPUT RF OUTPUT AND DC BIAS GROUND A07