MSA-0735 HP | Alldatasheet

Document overview

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Technical content

Features

  • Cascadable 50 Ω Gain Block
  • Low Operating Voltage:

4.0 V Typical Vd

  • 3 dB Bandwidth: DC to 2.4 GHz
  • 13.0 dB Typical Gain at 1.0␣ GHz
  • Unconditionally Stable (k>1)
  • Cost Effective Ceramic Microstrip Package MSA-0735, -0736 35 micro-X Package[1]

Description

The MSA-0735 is a high perfor- mance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a cost effective, Typical Biasing Configuration Note: 1. Short leaded 36 package available upon request. C block C block R bias VCC > 5 V Vd = 4.0 V RFC (Optional) IN OUT MSA microstrip package. This MMIC is designed for use as a general purpose 50 Ω gain block. Typical applications include narrow and broad band IF and RF amplifiers in industrial and military applica- tions. The MSA-series is fabricated using HP’s 10 GHz f T, 25␣ GHz fMAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metalli- zation to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. 5965-9591E

Parameter Absolute Maximum [1] Device Current 60 mA Power Dissipation[2,3] 275 mW RF Input Power +13 dBm Junction Temperature 200 °C Storage Temperature –65 to 200 °C Thermal Resistance[2,5]: θjc = 155°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. T CASE = 25°C. 3. Derate at 6.5 mW/°C for TC > 157°C. 4. Storage above +150°C may tarnish the leads of this package making it difficult to solder into a circuit. 5. Ths small spot size of this technique results in a higher, though more accurate determination of θjc than do alternate methods. See MEASURE- MENTS section “Thermal Resistance” for more information. GP Power Gain (|S21|2) f = 0.1 GHz dB 12.5 13.5 14.5 ΔGP Gain Flatness f = 0.1 to 1.3 GHz dB ± 0.6 ± 1.0 f3 dB 3 dB Bandwidth GHz 2.4 Input VSWR f = 0.1 to 2.5 GHz 2.0:1 Output VSWR f = 0.1 to 2.5 GHz 1.8:1 NF 50 Ω Noise Figure f = 1.0 GHz dB 4.5 P1 dB Output Power at 1 dB Gain Compression f = 1.0 GHz dBm 5.5 IP3 Third Order Intercept Point f = 1.0 GHz dBm 19.0 tD Group Delay f = 1.0 GHz psec 140 Vd Device Voltage V 3.6 4.0 4.4 dV/dT Device Voltage Temperature Coefficient mV/ °C –7.0 Note: 1. The recommended operating current range for this device is 15 to 40 mA. Typical performance as a function of current is on the following page. Electrical Specifications[1], TA = 25°C Symbol Parameters and Test Conditions: I d = 22 mA, ZO = 50 Ω Units Min. Typ. Max. VSWR Part Number Ordering Information Part Number No. of Devices Container MSA-0735 10 Strip MSA-0736-BLK 100 Antistatic Bag MSA-0736-TR1 1000 7" Reel For more information, see “Tape and Reel Packaging for Semiconductor Devices”.

A model for this device is available in the DEVICE MODELS section. Figure 1. Typical Power Gain vs.

0.1 GHz

0.5 GHz

1.0 GHz

2.0 GHz

Figure 4. Output Power at 1 dB Gain Compression, NF and Power Gain vs. Figure 5. Output Power at 1 dB Gain Figure 6. Noise Figure vs. Frequency.

35 micro-X Package Dimensions GROUND DIA. GROUND RF OUTPUT AND BIASRF INPUT .085 2.15 .083 2.11 .020 .508 .100 2.54 .455 – .030 11.54 – .75 .006 – .002 .15 – .05 Notes: (unless otherwise specified) 1. Dimensions are in 2. Tolerances in .xxx = – 0.005 mm .xx = – 0.13 mm .022 .56 .057 – .010 1.45 – .25 A07