MSA-0711 HP | Alldatasheet

Document overview

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Technical content

Features

  • Cascadable 50 Ω Gain Block
  • 3 dB Bandwidth: DC to 1.9 GHz
  • 12.0 dB Typical Gain at 1.0␣ GHz
  • Unconditionally Stable (k>1)
  • Low Cost Surface Mount Plastic Package
  • Tape-and-Reel Packaging Option Available[1] MSA-0711 Typical Biasing Configuration Note: 1. Refer to PACKAGING section “Tape- and-Reel Packaging for Surface Mount Semiconductors”. C block C block R bias VCC > 5 V Vd = 3.8 V RFC (Optional) IN OUT MSA

Description

The MSA-0711 is a low cost silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in the surface mount plastic SOT-143 package. This MMIC is designed for use as a general purpose 50 Ω gain block. Typical applications include narrow and broad band IF and RF amplifiers in commercial and industrial applications. The MSA-series is fabricated using HP’s 10 GHz f T, 25␣ GHz fMAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metalli- zation to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. 5965-9590E

Parameter Absolute Maximum [1] Device Current 50 mA Power Dissipation[2,3] 175 mW RF Input Power +13 dBm Junction Temperature 150 °C Storage Temperature –65 to 150 °C Thermal Resistance[2,4]: θjc = 505°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. T CASE = 25°C. 3. Derate at 2.0 mW/°C for TC > 62°C. 4. See MEASUREMENTS section “Thermal Resistance” for more information. Part Number Ordering Information Part Number No. of Devices Container MSA-0711-TR1 3000 7" Reel MSA-0711-BLK 100 Antistatic Bag For more information, see “Tape and Reel Packaging for Semiconductor Devices”. GP Power Gain (|S21|2) f = 0.1 GHz dB 13.0 f = 1.0 GHz 10.0 12.0 Δ GP Gain Flatness f = 0.1 to 1.3 GHz dB ± 0.8 f3 dB 3 dB Bandwidth GHz 3.2 Input VSWR f = 0.1 to 2.0 GHz 1.5:1 Output VSWR f = 0.1 to 2.0 GHz 1.5:1 NF 50 Ω Noise Figure f = 1.0 GHz dB 5.0 P1 dB Output Power at 1 dB Gain Compression f = 1.0 GHz dBm 5.5 IP3 Third Order Intercept Point f = 1.0 GHz dBm 18.0 tD Group Delay f = 1.0 GHz psec 145 Vd Device Voltage T C = 25°C V 3.0 3.8 4.6 dV/dT Device Voltage Temperature Coefficient mV/ °C –7.0 Note: 1. The recommended operating current range for this device is 15 to 30 mA. Typical performance as a function of current is on the following page. Electrical Specifications[1], TA = 25°C Symbol Parameters and Test Conditions: I d = 22 mA, ZO = 50 Ω Units Min. Typ. Max. VSWR

A model for this device is available in the DEVICE MODELS section. Figure 1. Power Gain vs. Frequency, Figure 2. Power Gain vs. Current. Figure 3. Output Power at 1 dB Gain Figure 4. Noise Figure vs. Frequency,

2.0 GHz

1.0 GHz

0.1 GHz

DIMENSIONS ARE IN MILLIMETERS (INCHES) 0.10 (0.004) 0.013 (0.0005) 0.92 (0.036) 0.78 (0.031) GROUND RF INPUT RF OUTPUT AND BIAS XXX PACKAGE MARKING CODE 1.40 (0.055) 1.20 (0.047) 2.65 (0.104) 2.10 (0.083) 0.54 (0.021) 0.37 (0.015) 0.60 (0.024) 0.45 (0.018) 2.04 (0.080) 1.78 (0.070) 3.06 (0.120) 2.80 (0.110) 0.15 (0.006) 0.09 (0.003) 1.02 (0.041) 0.85 (0.033) 0.69 (0.027) 0.45 (0.018) GROUND A07