MSA-0670 HP | Alldatasheet
Document overview
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- PDF pages: 4
Technical content
Features
- Cascadable 50 Ω Gain Block
- Low Operating Voltage:
3.5 V Typical Vd
- 3 dB Bandwidth: DC to 1.0 GHz
- High Gain: 19.5␣ dB Typical at 0.5 GHz
- Low Noise Figure: 2.8 dB Typical at 0.5 GHz
- Hermetic Gold-ceramic Microstrip Package MSA-0670 70 mil Package Typical Biasing Configuration C block C block R bias VCC > 5 V Vd = 3.5 V RFC (Optional) IN OUT MSA
Description
The MSA-0670 is a high perfor- mance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a hermetic, high reliability package. This MMIC is designed for use as a general purpose 50 Ω gain block. Typical applications include narrow and broad band IF and RF amplifiers in industrial and military applications. The MSA-series is fabricated using HP’s 10 GHz f T, 25␣ GHz fMAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metalli- zation to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. 5965-9586E
Parameter Absolute Maximum [1] Device Current 50 mA Power Dissipation[2,3] 200 mW RF Input Power +13 dBm Junction Temperature 200 °C Storage Temperature –65 to 200 °C Thermal Resistance[2,4]: θjc = 130°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. T CASE = 25°C. 3. Derate at 7.7 mW/°C for TC > 174°C. 4. The small spot size of this technique results in a higher, though more accurate determination of θjc than do alternate methods. See MEASURE- MENTS section “Thermal Resistance” for more information. GP Power Gain (|S21|2) f = 0.1 GHz dB 19.0 20.5 22.0 ΔGP Gain Flatness f = 0.1 to 0.6 GHz dB ± 0.7 ± 1.0 f3 dB 3 dB Bandwidth GHz 1.0 Input VSWR f = 0.1 to 1.5 GHz 1.9:1 Output VSWR f = 0.1 to 1.5 GHz 1.8:1 NF 50 Ω Noise Figure f = 0.5 GHz dB 2.8 4.0 P1 dB Output Power at 1 dB Gain Compression f = 0.5 GHz dBm 2.0 IP3 Third Order Intercept Point f = 0.5 GHz dBm 14.5 tD Group Delay f = 0.5 GHz psec 200 Vd Device Voltage V 3.1 3.5 3.9 dV/dT Device Voltage Temperature Coefficient mV/ °C –8.0 Note: 1. The recommended operating current range for this device is 12 to 30 mA. Typical performance as a function of current is on the following page. Electrical Specifications[1], TA = 25°C Symbol Parameters and Test Conditions: I d = 16 mA, ZO = 50 Ω Units Min. Typ. Max. VSWR
- A model for this device is available in the DEVICE MODELS section.
Figure 1. Typical Power Gain vs. Frequency, TA = 25°C, Id = 16 mA.
0.1 GHz
0.5 GHz
1.0 GHz
2.0 GHz
Figure 4. Output Power at 1 dB Gain Compression, NF and Power Gain vs. Figure 5. Output Power at 1 dB Gain Figure 6. Noise Figure vs. Frequency.
.020 .508 .070 1.70 .495 – .030 12.57 – .76 Notes: (unless otherwise specified) 1. Dimensions are in 2. Tolerances in .xxx = – 0.005 mm .xx = – 0.13 mm .040 1.02 .035 .89 .004 – .002 .10 – .05