MSA-0635 HP | Alldatasheet
Document overview
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Technical content
Features
- Cascadable 50 Ω Gain Block
- Low Operating Voltage:
3.5 V Typical Vd
- 3 dB Bandwidth: DC to 0.9 GHz
- High Gain: 19.0␣ dB Typical at 0.5 GHz
- Low Noise Figure: 2.8 dB Typical at 0.5 GHz
- Cost Effective Ceramic Microstrip Package MSA-0635, -0636 35 micro-X Package[1]
Description
The MSA-0635 is a high perfor- mance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a cost effective, microstrip package. This MMIC is Typical Biasing Configuration Note: 1. Short leaded 36 package available upon request. C block C block R bias VCC > 5 V Vd = 3.5 V RFC (Optional) IN OUT MSA designed for use as a general purpose 50 Ω gain block. Typical applications include narrow and broad band IF and RF amplifiers in commercial and industrial applications. The MSA-series is fabricated using HP’s 10 GHz f T, 25␣ GHz fMAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metalli- zation to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. Available in cut lead version (package 36) as MSA-0636. 5965-9585E
Parameter Absolute Maximum [1] Device Current 50 mA Power Dissipation[2,3] 200 mW RF Input Power +13 dBm Junction Temperature 200 °C Storage Temperature[4] –65 to 200°C Thermal Resistance[2,5]: θjc = 155°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. T CASE = 25°C. 3. Derate at 6.5 mW/°C for TC > 169°C. 4. Storage above +150 °C may tarnish the leads of this package making it difficult to solder into a circuit. 5. The small spot size of this technique results in a higher, though more accurate determination of θjc than do alternate methods. See MEASURE- MENTS section “Thermal Resistance” for more information. GP Power Gain (|S21|2) f = 0.1 GHz dB 19.0 20.5 22.0 ΔGP Gain Flatness f = 0.1 to 2.5 GHz dB ± 0.7 ± 1.0 f3 dB 3 dB Bandwidth GHz 0.9 Input VSWR f = 0.1 to 1.5 GHz 1.4:1 Output VSWR f = 0.1 to 1.5 GHz 1.3:1 NF 50 Ω Noise Figure f = 0.5 GHz dB 2.8 4.0 P1 dB Output Power at 1 dB Gain Compression f = 0.5 GHz dBm 2.0 IP3 Third Order Intercept Point f = 0.5 GHz dBm 14.5 tD Group Delay f = 0.5 GHz psec 200 Vd Device Voltage V 3.1 3.5 3.9 dV/dT Device Voltage Temperature Coefficient mV/ °C –8.0 Note: 1. The recommended operating current range for this device is 12 to 30 mA. Typical performance as a function of current is on the following page. Electrical Specifications[1], TA = 25°C Symbol Parameters and Test Conditions: I d = 16 mA, ZO = 50 Ω Units Min. Typ. Max. VSWR
- A model for this device is available in the DEVICE MODELS section.
Figure 1. Typical Power Gain vs.
0.1 GHz
0.5 GHz
1.0 GHz
2.0 GHz
Figure 4. Output Power at 1 dB Gain Compression, NF and Power Gain vs. Figure 5. Output Power at 1 dB Gain Figure 6. Noise Figure vs. Frequency.
35 micro-X Package Dimensions GROUND DIA. GROUND RF OUTPUT AND BIASRF INPUT .085 2.15 .083 2.11 .020 .508 .100 2.54 .455 – .030 11.54 – .75 .006 – .002 .15 – .05 Notes: (unless otherwise specified) 1. Dimensions are in 2. Tolerances in .xxx = – 0.005 mm .xx = – 0.13 mm .022 .56 .057 – .010 1.45 – .25 A06