MSA-0520 HP | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

Features

  • Cascadable 50 Ω Gain Block
  • High Output Power: +23 dBm Typical P1 dB at 1.0␣ GHz
  • Low Distortion: 33 dBm Typical IP3 at 1.0␣ GHz
  • 8.5 dB Typical Gain at 1.0␣ GHz
  • Hermetic Metal/Beryllia Microstrip Package MSA-0520 200 mil BeO Package

Description

The MSA-0520 is a high perfor- mance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a hermetic, Typical Biasing Configuration C block C block R bias VCC > 15 V Vd = 12 V RFC (Optional) IN OUT MSA BeO disk package for good thermal characteristics. This MMIC is designed for use as a general purpose 50 Ω gain block. Typical applications include narrow and broad band IF and RF amplifiers in industrial and military applications. The MSA-series is fabricated using HP’s 10 GHz f T, 25␣ GHz fMAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metalli- zation to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. 5965-9582E

Parameter Absolute Maximum [1] Device Current 225 mA Power Dissipation[2,3] 3.0 W RF Input Power +25 dBm Junction Temperature 200 °C Storage Temperature –65 to 200 °C Thermal Resistance[2,4]: θjc = 25°C/W P1 dB Output Power at 1 dB Gain Compression f = 1.0 GHz dBm 21.0 23.0 GP Power Gain (|S21|2) f = 0.1 GHz dB 7.5 8.5 9.5 ΔGP Gain Flatness f = 0.1 to 2.0 GHz dB ± 0.75 f3 dB 3 dB Bandwidth[2] GHz 2.8 Input VSWR f = 0.1 to 2.0 GHz 2.0:1 Output VSWR f = 0.1 to 2.0 GHz 2.5:1 IP3 Third Order Intercept Point f = 1.0 GHz dBm 33.0 NF50 Ω 50 Ω Noise Figure f = 1.0 GHz dB 6.5 tD Group Delay f = 1.0 GHz psec 170 Vd Device Voltage V 10.5 12.0 13.5 dV/dT Device Voltage Temperature Coefficient mV/ °C –16.0 Notes: 1. The recommended operating current range for this device is 80 to 200 mA. Typical performance as a function of current is on the following page. 2. Referenced from 0.1 GHz Gain (GP). Electrical Specifications[1], TA = 25°C Symbol Parameters and Test Conditions: I d = 165 mA, ZO = 50 Ω Units Min. Typ. Max. VSWR Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. T CASE = 25°C. 3. Derate at 40 mW/°C for TC > 125°C. 4. The small spot size of this technique results in a higher, though more accurate determination of θjc than do alternate methods. See MEASURE- MENTS section “Thermal Resistance” for more information.

A model for this device is available in the DEVICE MODELS section. Figure 1. Typical Gain vs. Power Out,

0.1 GHz

0.5 GHz

1.0 GHz

2.0 GHz

Figure 2. Device Current vs. Voltage. Figure 3. Output Power at 1 dB Gain Figure 6. VSWR vs. Frequency, Figure 5. Gain vs. Frequency.

1.5 GHz P1 dB

Figure 4. Output Power @ 1 dB Gain

200 mil BeO Package Dimensions 1 3 GROUND GROUND NO REFERENCE RF OUTPUT AND BIAS RF INPUT 45° .060 1.52 Notes: (unless otherwise specified) 1. Dimensions are in 2. Tolerances in .xxx = – 0.005 mm .xx = – 0.13 3. Base of package is electrically isolated. mm .128 3.25 .205 5.21 .023 .57 .048 – .010 1.21 – .25 .300 – .025 7.62 – .64 .030 .76 .004 – .002 .10 – .05