MSA-0505 HP | Alldatasheet

Document overview

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Technical content

Features

  • Cascadable 50 Ω Gain Block
  • High Output Power: 18.0 dBm Typical P1 dB at 1.0␣ GHz
  • Low Distortion: 29.0 dBm Typical IP3 at 1.0␣ GHz
  • 7.0 dB Typical Gain at 1.0␣ GHz
  • Surface Mount Plastic Package
  • Tape-and-Reel Packaging Option Available[1] MSA-0505

05 Plastic PackageDescription

The MSA-0505 is a high perfor- mance medium power silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a low cost, surface mount package. This MMIC is designed for use as a general purpose 50 Ω gain block. Typical applications include narrow and broad band IF and RF amplifiers in commercial systems. The MSA-series is fabricated using HP’s 10 GHz f T, 25␣ GHz fMAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metalli- zation to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. Typical Biasing Configuration C block C block R bias VCC > 12 V Vd = 8.4 V RFC (Optional) IN OUT MSA Note: 1. Refer to PACKAGING section “Tape-and-Reel Packaging for Semiconductor Devices.” 5965-9581E

Parameter Absolute Maximum [1] Device Current 135 mA Power Dissipation[2,3] 1.5 W RF Input Power +25 dBm Junction Temperature 200 °C Storage Temperature –65 to 150 °C Thermal Resistance[2,4]: θjc = 85°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. T CASE = 25°C. 3. Derate at 11.8 mW/°C for TC > 73°C. 4. See MEASUREMENTS section “Thermal Resistance” for more information. P1 dB Output Power at 1 dB Gain Compression f = 0.5 GHz dBm 19.0 f = 1.0 GHz dBm 16.0 18.0 GP Power Gain (|S21|2) f = 0.5 GHz dB 7.5 f = 1.0 GHz 6.0 7.0 ΔGP Gain Flatness f = 0.1 to 1.5 GHz dB ± 0.75 f3 dB 3 dB Bandwidth[2] GHz 2.3 Input VSWR f = 0.1 to 1.5 GHz 1.6:1 Output VSWR f = 0.1 to 1.5 GHz 2.0:1 IP3 Third Order Intercept Point f = 1.0 GHz dBm 29.0 NF 50 Ω Noise Figure f = 1.0 GHz dB 6.5 tD Group Delay f = 1.0 GHz psec 190 Vd Device Voltage V 6.7 8.4 10.1 dV/dT Device Voltage Temperature Coefficient mV/ °C –16.0 Notes: 1. The recommended operating current range for this device is 60 to 100 mA. Typical performance as a function of current is on the following page. 2. Referenced from 0.1 GHz Gain (GP). Electrical Specifications[1], TA = 25°C Symbol Parameters and Test Conditions: I d = 80 mA, ZO = 50 Ω Units Min. Typ. Max. VSWR Part Number Ordering Information Part Number No. of Devices Container MSA-0505-TR1 500 7" Reel MSA-0505-STR 10 Strip For more information, see “Tape and Reel Packaging for Semiconductor Devices”.

A model for this device is available in the DEVICE MODELS section. Figure 1. Typical Gain vs. Power Out,

0.1 GHz

0.5 GHz

1.0 GHz

1.5 GHz

2.0 GHz

Figure 2. Device Current vs. Voltage. Figure 3. Output Power at 1 dB Gain Figure 5. Output Power at 1 dB Gain vs. Case Temperature, f = 1.0 GHz. Figure 4. Gain vs. Frequency,

05 Plastic Package Dimensions

0.030 0.89 0.100 – 0.010 2.54 – 0.25 0.135 – 0.015 3.42 – 0.25 (4 PLCS) 1 3 0.008 – 0.002 0.20 – 0.05 0.0005 – 0.010 (0.013 – 0.25) 0.050 1.27 GROUND RF INPUT RF OUTPUT AND DC BIAS GROUND 0.030 0.76 0.030 0.76 0.145 3.68 0.020 0.51 DIA 0.030 – 0.010 0.76 – 0.25 (4 PLCS) Notes: (unless otherwise specified) 1. Dimensions are in 2. Tolerances in .xxx = – 0.005 mm .xx = – 0.13 mm