MSA-0420 HP | Alldatasheet

Document overview

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Technical content

Features

  • Cascadable 50 Ω Gain Block
  • 3 dB Bandwidth: DC to 4.0 GHz
  • 8.5 dB Typical Gain at 1.0␣ GHz
  • 16.0 dBm Typical P 1 dB at 1.0␣ GHz
  • Unconditionally Stable (k>1)
  • Hermetic Metal/Beryllia Microstrip Package MSA-0420 200 mil BeO Package

Description

The MSA-0420 is a high perfor- mance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a hermetic, Typical Biasing Configuration C block C block R bias VCC > 10 V Vd = 6.3 V RFC (Optional) IN OUT MSA high reliability package. This MMIC is designed for use as a general purpose 50 Ω gain block. Typical applications include narrow and broad band IF and RF amplifiers in industrial and military applications. The MSA-series is fabricated using HP’s 10 GHz f T, 25␣ GHz fMAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metalli- zation to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. 5965-9574E

Parameter Absolute Maximum [1] Device Current 120 mA Power Dissipation[2,3] 850 mW RF Input Power +13 dBm Junction Temperature 200 °C Storage Temperature –65 to 200 °C Thermal Resistance[2,4]: θjc = 40°C/W GP Power Gain (|S21|2) f = 0.1 GHz dB 7.5 8.5 9.5 ΔGP Gain Flatness f = 0.1 to 2.5 GHz dB ± 0.6 ± 1.0 f3 dB 3 dB Bandwidth GHz 4.3 Input VSWR f = 0.1 to 2.5 GHz 1.7:1 Output VSWR f = 0.1 to 2.5 GHz 1.8:1 NF 50 Ω Noise Figure f = 1.0 GHz dB 6.5 P1 dB Output Power at 1 dB Gain Compression f = 1.0 GHz dBm 14.0 16.0 IP3 Third Order Intercept Point f = 1.0 GHz dBm 30.0 tD Group Delay f = 1.0 GHz psec 140 Vd Device Voltage V 5.7 6.3 6.9 dV/dT Device Voltage Temperature Coefficient mV/ °C –8.0 Note: 1. The recommended operating current range for this device is 40 to 110 mA. Typical performance as a function of current is on the following page. Electrical Specifications[1], TA = 25°C Symbol Parameters and Test Conditions: I d = 90 mA, ZO = 50 Ω Units Min. Typ. Max. VSWR Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. T CASE = 25°C. 3. Derate at 25 mW/°C for TC > 166°C. 4. The small spot size of this technique results in a higher, though more accurate determination of qjc than do alternate methods. See MEASURE- MENTS section “Thermal Resistance” for more information.

Figure 1. Typical Power Gain vs. Frequency, TA = 25°C, Id = 90 mA. Figure 2. Device Current vs. Voltage. Figure 4. Output Power at 1 dB Gain Compression, NF and Power Gain vs. Figure 5. Output Power at 1 dB Gain Figure 6. Noise Figure vs. Frequency. Figure 3. Power Gain vs. Current.

0.1 GHz

1.0 GHz

2.0 GHz

A model for this device is available in the DEVICE MODELS section.

200 mil BeO Package Dimensions 1 3 GROUND GROUND NO REFERENCE RF OUTPUT AND BIAS RF INPUT 45° .060 1.52 Notes: (unless otherwise specified) 1. Dimensions are in 2. Tolerances in .xxx = – 0.005 mm .xx = – 0.13 mm .128 3.25 .205 5.21 .023 .57 .048 – .010 1.21 – .25 .300 – .025 7.62 – .64 .030 .76 .004 – .002 .10 – .05