MSA-0404 HP | Alldatasheet

Document overview

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Technical content

Features

  • Cascadable 50 Ω Gain Block
  • 3 dB Bandwidth: DC to 2.5 GHz
  • 7.5 dB Typical Gain at 1.0␣ GHz
  • 11.5 dBm Typical P 1 dB at 1.0␣ GHz
  • Unconditionally Stable (k>1)
  • Low Cost Plastic Package MSA-0404 04A Plastic Package

Description

The MSA-0404 is a high perfor- mance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a low cost Typical Biasing Configuration C block C block R bias VCC > 7 V Vd = 5.25 V RFC (Optional) IN OUT MSA plastic package. This MMIC is designed for use as a general purpose 50 Ω gain block. Typical applications include narrow and broad band IF and RF amplifiers in commercial and industrial applications. The MSA-series is fabricated using HP’s 10 GHz f T, 25␣ GHz fMAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metalli- zation to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. 5965-9573E

Parameter Absolute Maximum [1] Device Current 85 mA Power Dissipation[2,3] 500 mW RF Input Power +13 dBm Junction Temperature 150 °C Storage Temperature –65 to 150 °C Thermal Resistance[2,4]: θjc = 85°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. T CASE = 25°C. 3. Derate at 10 mW/°C for TC > 108°C. 4. See MEASUREMENTS section “Thermal Resistance” for more information. GP Power Gain (|S21|2) f = 0.1 GHz dB 8.3 f = 0.5 GHz 7.0 8.0 f = 1.0 GHz 7.5 ΔG P Gain Flatness f = 0.1 to 2.0 GHz dB ± 1.0 f3 dB 3 dB Bandwidth GHz 2.5 Input VSWR f = 0.1 to 2.5 GHz 1.4:1 Output VSWR f = 0.1 to 2.5 GHz 1.8:1 NF 50 Ω Noise Figure f = 1.0 GHz dB 7.0 P1 dB Output Power at 1 dB Gain Compression f = 1.0 GHz dBm 11.5 IP3 Third Order Intercept Point f = 1.0 GHz dBm 24.5 tD Group Delay f = 1.0 GHz psec 150 Vd Device Voltage V 4.75 5.25 5.75 dV/dT Device Voltage Temperature Coefficient mV/ °C –8.0 Note: 1. The recommended operating current range for this device is 30 to 70 mA. Typical performance as a function of current is on the following page. Electrical Specifications[1], TA = 25°C Symbol Parameters and Test Conditions: I d = 50 mA, ZO = 50 Ω Units Min. Typ. Max. VSWR

Figure 1. Typical Power Gain vs. Frequency, TA = 25°C, Id = 50 mA. Figure 2. Device Current vs. Voltage. Figure 3. Power Gain vs. Current. Figure 4. Output Power at 1 dB Gain Compression, NF and Power Gain vs. Figure 5. Output Power at 1 dB Gain Figure 6. Noise Figure vs. Frequency.

0.1 GHz

1.0 GHz

2.0 GHz

A model for this device is available in the DEVICE MODELS section.

04A Plastic Package Dimensions 0.76 (0.030) 0.20 – 0.050 (0.008 – 0.002) 3.68 (0.145) 2.54 – 0.25 (0.100 – 0.010) 12.39 – 0.76 (0.488 – 0.030) 0.51 (0.020) 0.96 (0.038)4.29 (0.169) 0.76 (0.030) DIA. DIMENSIONS ARE IN MILLIMETERS (INCHES). RF INPUT RF OUTPUT & BIAS GROUND GROUND NOTES: (UNLESS OTHERWISE SPECIFIED) 1. DIMENSIONS ARE IN MILLIMETERS (INCHES) 2. TOLERANCES mm .XX = – 0.13 in .XXX = – 0.005