MSA-0385 HP | Alldatasheet
Document overview
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- PDF pages: 4
Technical content
Features
- Cascadable 50 Ω Gain Block
- 3 dB Bandwidth: DC to 2.5 GHz
- 12.0 dB Typical Gain at 1.0␣ GHz
- 10.0 dBm Typical P 1 dB at 1.0␣ GHz
- Unconditionally Stable (k>1)
- Low Cost Plastic Package MSA-0385
85 Plastic Package
Description
The MSA-0385 is a high perfor- mance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a low cost Typical Biasing Configuration C block C block R bias VCC > 7 V Vd = 5 V RFC (Optional) IN OUT MSA plastic package. This MMIC is designed for use as a general purpose 50 Ω gain block. Typical applications include narrow and broad band IF and RF amplifiers in commercial and industrial applications. The MSA-series is fabricated using HP’s 10 GHz f T, 25␣ GHz fMAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metalli- zation to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. 5965-9570E
Parameter Absolute Maximum [1] Device Current 70 mA Power Dissipation[2,3] 400 mW RF Input Power +13 dBm Junction Temperature 150 °C Storage Temperature –65 to 150 °C Thermal Resistance[2,4]: θjc = 105°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. T CASE = 25°C. 3. Derate at 9.5 mW/°C for TC > 108°C. 4. See MEASUREMENTS section “Thermal Resistance” for more information. GP Power Gain (|S21|2) f = 0.1 GHz dB 12.5 f = 1.0 GHz 10.0 12.0 Δ GP Gain Flatness f = 0.1 to 1.6 GHz dB ± 0.7 f3 dB 3 dB Bandwidth GHz 2.5 Input VSWR f = 0.1 to 3.0 GHz 1.5:1 Output VSWR f = 0.1 to 3.0 GHz 1.7:1 NF 50 Ω Noise Figure f = 1.0 GHz dB 6.0 P1 dB Output Power at 1 dB Gain Compression f = 1.0 GHz dBm 10.0 IP3 Third Order Intercept Point f = 1.0 GHz dBm 23.0 tD Group Delay f = 1.0 GHz psec 125 Vd Device Voltage V 4.0 5.0 6.0 dV/dT Device Voltage Temperature Coefficient mV/ °C –8.0 Note: 1. The recommended operating current range for this device is 20 to 50 mA. Typical performance as a function of current is on the following page. Electrical Specifications[1], TA = 25°C Symbol Parameters and Test Conditions: I d = 35 mA, ZO = 50 Ω Units Min. Typ. Max. VSWR
A model for this device is available in the DEVICE MODELS section. Figure 1. Typical Power Gain vs. Frequency, TA = 25°C, Id = 35 mA. Figure 2. Device Current vs. Voltage. Figure 3. Power Gain vs. Current. Figure 4. Output Power at 1 dB Gain Compression, NF and Power Gain vs. Figure 5. Output Power at 1 dB Gain Figure 6. Noise Figure vs. Frequency.
0.1 GHz
0.5 GHz
1.0 GHz
2.0 GHz
5° TYP. 45° GROUND GROUND RF OUTPUT AND BIAS RF INPUT .085 2.15 .286 – .030 7.36 – .76 Notes: (unless otherwise specified) 1. Dimensions are in 2. Tolerances in .xxx = – 0.005 mm .xx = – 0.13 mm .020 .51 .07 0.43 .060 – .010 .15 – .05 0.143 – 0.015 3.63 – 0.38