MSA-0311 HP | Alldatasheet

Document overview

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Technical content

Features

  • Cascadable 50 Ω Gain Block
  • 3 dB Bandwidth: DC to 2.3 GHz
  • 11.0 dB Typical Gain at 1.0␣ GHz
  • 9.0 dBm Typical P 1 dB at --1.0␣ GHz
  • Unconditionally Stable (k>1)
  • Low Cost Surface Mount Plastic Package
  • Tape-and-Reel Packaging Option Available[1] MSA-0311 SOT-143 PackageDescription The MSA-0311 is a low cost silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in the surface mount plastic SOT-143 package. This MMIC is designed for use as a general purpose 50 Ω gain block. Typical applications include narrow and broad band IF and RF amplifiers in commercial and industrial applications. The MSA-series is fabricated using HP’s 10 GHz f T, 25␣ GHz fMAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metalli- Typical Biasing Configuration C block C block R bias VCC > 7 V Vd = 4.7 V RFC (Optional) IN OUT MSA Note: 1. Refer to PACKAGING section “Tape- and-Reel Packaging for Semiconduc- tor Devices”. zation to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. 5965-9567E

Parameter Absolute Maximum [1] Device Current 60 mA Power Dissipation[2,3] 240 mW RF Input Power +13 dBm Junction Temperature 150 °C Storage Temperature –65 to 150 °C Thermal Resistance[2,4]: θjc = 500°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. T CASE = 25°C. 3. Derate at 2.0 mW/°C for TC > 30°C. 4. See MEASUREMENTS section “Thermal Resistance” for more information. Part Number Ordering Information Part Number No. of Devices Container MSA-0311-TR1 3000 7" Reel MSA-0311-BLK 100 Antistatic Bag For more information, see “Tape and Reel Packaging for Semiconductor Devices”. Electrical Specifications[1], TA = 25°C Symbol Parameters and Test Conditions: I d = 35 mA, ZO = 50 Ω Units Min. Typ. Max. GP Power Gain (|S21|2) f = 0.1 GHz dB 11.5 f = 1.0 GHz 9.0 11.0 ΔGP Gain Flatness f = 0.1 to 1.6 GHz dB ± 0.7 f3 dB 3 dB Bandwidth GHz 2.3 Input VSWR f = 0.1 to 3.0 GHz 1.5:1 Output VSWR f = 0.1 to 3.0 GHz 1.7:1 NF 50 Ω Noise Figure f = 1.0 GHz dB 6.0 P 1 dB Output Power at 1 dB Gain Compression f = 1.0 GHz dBm 9.0 IP3 Third Order Intercept Point f = 1.0 GHz dBm 22.0 tD Group Delay f = 1.0 GHz psec 140 Vd Device Voltage T C = 25°C V 3.8 4.7 5.6 dV/dT Device Voltage Temperature Coefficient mV/ °C –8.0 Notes: 1. The recommended operating current range for this device is 20 to 40 mA. Typical gain performance as a function of current is on the following page. VSWR

Figure 1. Typical Power Gain vs. Figure 2. Power Gain vs. Current. Figure 4. Noise Figure vs. Frequency, Figure 3. Output Power at 1 dB Gain

0.1 GHz

1.0 GHz

2.0 GHz

A model for this device is available in the DEVICE MODELS section.

DIMENSIONS ARE IN MILLIMETERS (INCHES) 0.10 (0.004) 0.013 (0.0005) 0.92 (0.036) 0.78 (0.031) GROUND RF INPUT RF OUTPUT AND BIAS XXX PACKAGE MARKING CODE 1.40 (0.055) 1.20 (0.047) 2.65 (0.104) 0.37 (0.015) 0.60 (0.024) 0.45 (0.018) 2.04 (0.080) 1.78 (0.070) 3.06 (0.120) 2.80 (0.110) 0.15 (0.006) 0.09 (0.003) 1.02 (0.041) 0.85 (0.033) 0.69 (0.027) 0.45 (0.018) GROUND Package marking code is “A03”