MSA-0270 HP | Alldatasheet

Document overview

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Technical content

Features

  • Cascadable 50 Ω Gain Block
  • 3 dB Bandwidth: DC to 2.8 GHz
  • 12.0 dB Typical Gain at 1.0␣ GHz
  • Unconditionally Stable (k>1)
  • Hermetic Gold-ceramic Microstrip Package MSA-0270 70 mil Package

Description

The MSA-0270 is a high perfor- mance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a hermetic, high reliability package. This Typical Biasing Configuration C block C block R bias VCC > 7 V Vd = 5 V RFC (Optional) IN OUT MSA MMIC is designed for use as a general purpose 50 Ω gain block. Typical applications include narrow and broad band IF and RF amplifiers in industrial and military applications. The MSA-series is fabricated using HP’s 10 GHz f T, 25␣ GHz fMAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metalli- zation to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. 5965-9698E

Parameter Absolute Maximum [1] Device Current 60 mA Power Dissipation[2,3] 325 mW RF Input Power +13 dBm Junction Temperature 200 °C Storage Temperature –65 to 200 °C Thermal Resistance[2,4]: θjc = 120°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. T CASE = 25°C. 3. Derate at 8.3 mW/°C for TC > 161°C. 4. The small spot size of this technique results in a higher, though more accurate determination of θjc than do alternate methods. See MEASURE- MENTS section “Thermal Resistance” for more information. GP Power Gain (|S21|2) f = 0.1 GHz dB 11.5 12.5 13.5 ΔGP Gain Flatness f = 0.1 to 1.8 GHz dB ± 0.6 ± 1.0 f3 dB 3 dB Bandwidth GHz 2.8 Input VSWR f = 0.1 to 3.0 GHz 1.4:1 Output VSWR f = 0.1 to 3.0 GHz 1.4:1 NF 50 Ω Noise Figure f = 1.0 GHz dB 6.5 P 1 dB Output Power at 1 dB Gain Compression f = 1.0 GHz dBm 4.5 IP3 Third Order Intercept Point f = 1.0 GHz dBm 17.0 tD Group Delay f = 1.0 GHz psec 125 Vd Device Voltage V 4.5 5.0 5.5 dV/dT Device Voltage Temperature Coefficient mV/ °C –8.0 Note: 1. The recommended operating current range for this device is 18 to 40 mA. Typical performance as a function of current is on the following page. Electrical Specifications[1], TA = 25°C Symbol Parameters and Test Conditions: I d = 25 mA, ZO = 50 Ω Units Min. Typ. Max. VSWR

A model for this device is available in the DEVICE MODELS section. Figure 1. Typical Power Gain vs. Frequency, TA = 25°C, Id = 25 mA. Figure 3. Power Gain vs. Current. Figure 6. Noise Figure vs. Frequency. Figure 5. Output Power at 1 dB Gain Figure 2. Device Current vs. Voltage. Figure 4. Output Power at 1 dB Gain Compression, NF and Power Gain vs.

0.1 GHz

0.5 GHz

1.0 GHz

2.0 GHz

.020 .508 .070 1.70 .495 – .030 12.57 – .76 Notes: (unless otherwise specified) 1. Dimensions are in 2. Tolerances in .xxx = – 0.005 mm .xx = – 0.13 mm .040 1.02 .035 .89 .004 – .002 .10 – .05