MSA-0235 HP | Alldatasheet
Document overview
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Technical content
Features
- Cascadable 50 Ω Gain Block
- 3 dB Bandwidth: DC to 2.7 GHz
- 12.0 dB Typical Gain at 1.0␣ GHz
- Unconditionally Stable (k>1)
- Cost Effective Ceramic Microstrip Package MSA-0235, -0236 35 micro-X Package[1]
Description
The MSA-0235 is a high perfor- mance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a cost effective, microstrip package. This MMIC is designed for use as a general Typical Biasing Configuration C block C block R bias VCC > 7 V Vd = 5 V RFC (Optional) IN OUT MSA Note: 1. Short leaded 36 package available upon request. purpose 50 Ω gain block. Typical applications include narrow and broad band IF and RF amplifiers in industrial and military applica- tions. The MSA-series is fabricated using HP’s 10 GHz f T, 25␣ GHz fMAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metalli- zation to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. Available in cut lead version (package 36) as MSA-0236. 5965-9697E
Parameter Absolute Maximum [1] Device Current 60 mA Power Dissipation[2,3] 325 mW RF Input Power +13 dBm Junction Temperature 200 °C Storage Temperature[4] –65 to 200°C Thermal Resistance[2,5]: θjc = 145°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. T CASE = 25°C. 3. Derate at 6.9 mW/°C for TC > 153°C. 4. Storage above +150 °C may tarnish the leads of this package making it difficult to solder into a circuit. 5. The small spot size of this technique results in a higher, though more accurate determination of θjc than do alternate methods. See MEASURE- MENTS section “Thermal Resistance” for more information. GP Power Gain (|S21|2) f = 0.1 GHz dB 11.5 12.5 13.5 ΔGP Gain Flatness f = 0.1 to 1.6 GHz dB ± 0.6 ± 1.0 f3 dB 3 dB Bandwidth GHz 2.7 Input VSWR f = 0.1 to 3.0 GHz 1.2:1 Output VSWR f = 0.1 to 3.0 GHz 1.4:1 NF 50 Ω Noise Figure f = 1.0 GHz dB 6.5 P 1 dB Output Power at 1 dB Gain Compression f = 1.0 GHz dBm 4.5 IP3 Third Order Intercept Point f = 1.0 GHz dBm 17.0 tD Group Delay f = 1.0 GHz psec 125 Vd Device Voltage V 4.5 5.0 5.5 dV/dT Device Voltage Temperature Coefficient mV/ °C –8.0 Note: 1. The recommended operating current range for this device is 18 to 40 mA. Typical performance as a function of current is on the following page. Electrical Specifications[1], TA = 25°C Symbol Parameters and Test Conditions: I d = 25 mA, ZO = 50 Ω Units Min. Typ. Max. VSWR Part Number Ordering Information Part Number No. of Devices Container MSA-0235 10 Strip MSA-0236-BLK 100 Antistatic Bag MSA-0236-TR1 1000 7" Reel For more information refer to PACKAGING section, “Tape and Reel Packaging for Semiconductor Devices.”
A model for this device is available in the DEVICE MODELS section. Figure 1. Typical Power Gain vs. Frequency, TA = 25°C, Id = 25 mA. Figure 3. Power Gain vs. Current. Figure 6. Noise Figure vs. Frequency. Figure 5. Output Power at 1 dB Gain Figure 2. Device Current vs. Voltage. Figure 4. Output Power at 1 dB Gain Compression, NF and Power Gain vs.
0.1 GHz
0.5 GHz
1.0 GHz
2.0 GHz
35 micro-X Package Dimensions A0213 GROUND DIA. GROUND RF OUTPUT AND BIASRF INPUT .085 2.15 .083 2.11 .020 .508 .100 2.54 .455 – .030 11.54 – .75 .006 – .002 .15 – .05 Notes: (unless otherwise specified) 1. Dimensions are in 2. Tolerances in .xxx = – 0.005 mm .xx = – 0.13 mm .022 .56 .057 – .010 1.45 – .25