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Document overview
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- PDF pages: 2
Technical content
Features
- Capacitance (65 fF Typ.)
- Low Series Resistance (3 Typ.)
- Cut-Off Frequency > 500 GHz
- Large Gold Bond Pads Specifications @ 25°C (Per Junction)
- VF (1 mA): 650–750 mV
- VF (1 mA): 10 mV Max.
- RS (10 mA): 7 Max.
- IR (3 V): 10 A Max.
- CT (0 V): 80 fF Max. Maximum Ratings
Description
The MS8350 is a GaAs flip chip series pair Schottky device designed for use as balanced mixer elements at microwave and millimeter wave frequencies. Their high cut-off frequency insures good performance at frequencies to 100 GHz. Applications include , transceivers, digital radios and automotive radar detectors. These flip chip devices incorporate Microsemi’s expertise in GaAs material processing, silicon nitride protective coatings and high temperature metalization. They have large, 5 x 5 mil, bond pads for ease of insertion. The MS8350 is priced for high volume commercial and industrial
applications
Insertion Temperature 250°C for 10 Seconds Incident Power +20 dBm @ 25°C Forward Current 15 mA @ 25°C Reverse Voltage 3 V Operating Temperature -55°C to +125°C Storage Temperature -65°C to +150°C
MS8350 – P2819 Microsemi Microwave Products 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 Page 2 GaAs Schottky Diodes Low RS Series Pair TM ® Copyright 2008 Rev: 2009-05-11 INCHES MM DIM MIN. MAX. MIN. MAX. A 0.0275 0.0285 0.698 0.724 B 0.0185 0.0195 0.470 0.495 C 0.0046 0.0056 0.117 0.142 D 0.0046 0.0056 0.117 0.142 E 0.0195 0.0205 0.495 0.521 F 0.0050 0.0060 0.127 0.152 G 0.0045 0.0055 0.114 0.140 H 0.0105 0.0115 0.267 0.292 J 0.0095 0.0105 0.241 0.267 P2819 Spice Model Parameters (Per Junction) IS RS N TT CJ0 CP M EG VJ BV IBV A Sec pF pF eV V V A