MS830 MICROSEMI | Alldatasheet
Document overview
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Technical content
8 Amp Schottky Rectifier
Dim. Inches Millimeter Minimum Maximum Minimum Maximum Notes A 188 -260 4.78 6.50 Dia. Cc .285 375 7.24 9.52 aN c ¥
3 PLASTIC D0201AD
—Lo Working Repetitive . - Microsemi Peak Reverse Peak Reverse * Schottky Barrier Rectifier Catalog Number Voltage Voltage Guard Ring Protection e@175°C Junction Temperature MS830 30V 30V . a MS835 35V 35V @ High Current Capability ws840 40v 40v eVRRM 30 to 45 Volts MS845 45V 45V
Electrical Characteristics
Average forward current 'F(AV) 8.0 Amps TA = 130°C Square wave, R@JL = 9.0°C/W, L = 3/8” Moximum surge current | F(AV) 400 Amps 8.3ms, half sine, TJ = 175°C Max peak forward voltage VEM .47 Volts IFM = 8.0A:TJ = 150°C * Max peak forward voltage VFM .62 Volts IFM = 8.0A;TJ = 25°C * Max peok reverse current IRM 250 uA VeRM,TJ = 25°C Typical junction capacitance CJ 660pF VR = 5.0V,1J = 25°C * Pulse test: Pulse width 300 jsec, Duty cycle 2% Thermal and Mechanical Characteristics Storage temperature range TsT¢ -55°C to 175°C Operating junction temp range Ty -55°C to 175°C Maximum thermal resistance L = 3/8” ROL 9.0°C/W Junction to lead Weight .032 ounces (1.0 grams) typical 4-6-00 Rev. 1 . COLORADO a 800 Hoyt Street Broomfield, CO. 80020 jcrosemi :2 FAX: (303) 466-3775 www.microsemi.com
Typical Forward Characteristic Typical Junction Capacitance a SS SS SS soo} —— A a ee) A A A a a OO goon TTT PEP Py ae ‘e Psst Tt FE soo LUTTE TT LL LL LL | fro! 2see] | | | 5 ——aea Seal eis 200] s J RN EY 7/7 8 a Se S gol LTT TTT TTI TTT) /| /| ° a a a 5 200 sop 3 A A 3 100 eH t rrr yy rrr rrr TDs 1 10 100
40 Ete et ART PP et Reverse Voltage - Volts
: l I Oe § ghee £ a A | Fe) a aes A OO 8 Sao TTA WT TTT TTT TT | & (TTA TT TT TTT TT got LVI TTT TT TT § 20 ] £2 10 I i i ) Instantaneous Forward Voltage — Volts Figure 2 Typical Reverse Characteristics < 1000 SE tt x SSS SSS ' | — 100 oe — ee £ SS SSS SSS] % 10 ee 3 SS & SS a ae
3 SSS SS SS SS SS SSS
| a 0 10 20 30 40 50 Reverse Voltage — Volts 4-6-00 Rev. 1