MS652 MICROSEMI | Alldatasheet
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Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. MS652/MS652S 5.0 Watts, 12.5 Volts, Class C UHF Applications GENERAL DESCRIPTION The MS652/MS652S is a common emitter and 12.5V Class C epitaxial silicon NPN planar transistor designed primarily for UHF communications. It withstands severe mismatch under normal operating conditions. ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25 °C 25 Watts BV CBO Collector to Base Voltage 36 Volts BV CEO Collector to Emitter Voltage 16 Volts BV EBO Emitter to Base Voltage 4.0 Volts IC Collector Current 2.0 Amps Storage Temperature -65 to +150 °C Operating Junction Temperature +200 °C .280 4L STUD(M122), Epoxy sealed MS652 .280 4LSL (M123), Epoxy sealed MS652S FUNCTIONAL CHARACTERISTICS @ 25 °° °°C SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS POUT Power Out 5.0 - - W PIN Power Input - - 0.5 W G P Power Gain F = 512 MHz V CE = 12.5V 10.0 - - dB η Efficiency P OUT = 5W 60 - - % ELECTRICAL CHARACTERISTICS @ 25 °° °°C SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS BV CES Collector to Emitter Breakdown I C = 25 mA, VBE = 0 36 - - V BV CEO Collector to Emitter Breakdown IC = 50 mA, IB = 0 16 - - V BV CBO Collector to Base Breakdown I C = 25 mA, IE = 0 36 - - V BV EBO Emitter to Base Breakdown I E = 5 mA, IC = 0 4.0 - - V ICES Collector to Emitter Leakage V CE = 15 V, VBE = 0 - - 1.0 mA hFE DC – Current Gain I C = 200 mA, V CE = 5 V 10 - 150 - C OB Output Capacitance F = 1MHz, V CB = 15V - - 15 pF θjc 1 Junction-Case Thermal Resistance - - 7 °C/W NOTES: 1. At rated output power with MSC fixture. Rev. A: May. 2010
Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. MS652/MS652S Typical Impedance Values DUT ZS ZL Frequency (MHz) Z S ( Ω) Z L ( Ω) 400 1.2 – j0.6 6.5 + j6.5 440 1.2 – j0.9 7.2 + j6.0 470 1.2 – j1.2 7.7 + j5.3 512 1.2 – j1.5 8.3 + j4.5 * V CC = 12.5V, POUT = 5W Input Matching Network Output Matching Network
Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. MS652/MS652S 440 - 512 MHz Broadband Test Circuit
Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. MS652/MS652S