MS652 ADPOW | Alldatasheet
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Technical content
MS652 .PDF 12 - 04 - 03 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. Page 1 MS652/ MS652S RF & MICROWAVE TRANSISTORS ESCRIPTIONESCRIPTION The MS652/ MS652S is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for UHF communications. It withstands severe mismatch under normal operating conditions. KEY FEATURES KEY FEATURES § 512 MHz § 12.5 Volts § Common Emitter § P OUT = 5 W Min. § G P = 10.0 dB Gain APPLICATIONS/BENEFITAPPLICATIONS/BENEFITSS § UHF Portable/Mobile
Applications
ABSOLUTE MAXIMUM RATINGS (TCASE = 25°°C) Symbol Parameter V alue Unit V CBO Collector - Base Voltage 36 V V CEO Collector - Emitter Voltage 16 V V EBO Emitter - Base Voltage 4.0 V I C Device Current 2 A P DISS Power Dissipation 25 W T J Junction Temperature +200 °C T STG Storage Temperature - 65 to +150 °C THERMAL DATA R TH(j - c) Junction - Case Thermal Resistance 7 °C/W MS652 MS652 S
MS652 .PDF 12 - 04 - 03 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. Page 2 MS652/ MS652S RF & MICROWAVE TRANSISTORS STATIC ELECTRICAL SPECIFICATIONS (TCASE = 25°C) MS652S Symbol Test Conditions Min. Typ. Max. Units BV CES IC = 25 mA V BE = 0 36 V BV CEO IC = 50 mA IB = 0 16 V BV CB O IC = 25 mA IE = 0 36 V BV EBO IE = 5 mA IC = 0 4.0 V I CES V CE = 15 V V BE = 0 1.0 mA h FE V CE = 5 V IC = 200 mA 10 150 DYNAMIC ELECTRICAL SPECIFICATIONS (TCASE = 25°C) MS652S Symbol Test Conditions Min. Typ. Max. Units P OUT f = 512 MHz V CC = 12.5 V 5 W G P f = 512 MHz V CC = 12.5 V 10 dB ηη f = 512 MHz V CC = 12.5 V P OUT = 5 W 60 % C OB f = 1 MHz V CB = 15 V 15 pF LARGE SIGNAL IMPEDANCE DATA Fr e quency MHz Z IN Z CL Units 400 1.2 + j0.6 6.5 + j6. 5 Ω 440 1.2 + j0. 9 7.2 + j6.0 Ω 470 1.2 + j1.2 7.7 + j5.3 Ω 512 1.2 + j1.5 8.3 + j4.5 Ω Conditions Vcc = 12.5V, Pout = 5W
MS652 .PDF 12 - 04 - 03 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. Page 3 MS652/ MS652S RF & MICROWAVE TRANSISTORS TEST CIRCUIT
MS652 .PDF 12 - 04 - 03 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. Page 4 MS652/ MS652S RF & MICROWAVE TRANSISTORS PACKAGE OUTLINE