MS502 ZSELEC | Alldatasheet
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! Sc hottk y Barrier Chip ! Guard Ring Die Construction for Transient Protection ! H i g h C u r r e n t C a p a b i l i t y A B A ! Low Power Loss, High Efficiency ! High Surge Current Capability ! For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity P r o t e c t i o n A p p l i c a t i o n s C /G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01D Mechanical D ata ! Cas e: DO -201AD, Molded Plastic ! Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 ! Polarity: Cathode Band ! Weight: 1.2 grams (approx.) ! Mounting Position: Any ! Marking: Type Number ! Lead Free: For RoHS / Lead Free Version Maximum Ra tings and Electrical Characteristics @TA=25°C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. P eak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR RM S Reverse Voltage VR(RMS) Av erage Rectified Output Current @T L = 95°C (Not e 1) IO Non-Repet i tive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) I FSM Forward V o ltage @I F = 5. 0A V FM P ea k R e v e r s e C u r r e n t @ TA = 25°C A t Rated DC Blocking Voltage @T A = 100°C IRM 0.1 20 mA T y pical Junction Capacitance (Note 2) Cj T y pical Thermal Resistance (Note 1) R/G01JA Operat i ng and Storage Temperature Range Tj, TSTG Note: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case. 1 of 2 V 55 0.75 0.85 0.92 V 100 150 105 200 140 www.senocn.com Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com DO-201 AD Dim M in Max A 25.4 — B 8.50 9. C 1. 20 1.30 D 5.0 5. All Di mensions in mm DO-201AD Dim M in Max A 24.5 — B 7.20 9. C 1. 10 1.30 D 5.00 5. All Di mensions in mm Sy mbol MS502 MS503 MS504 MS505 MS506 MS508 MS510 MS515 MS520 Unit MS502 – MS520 MS502 – MS520
/G01 Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com 1.0 25 50 75 100 125 150 I A VERAGE FORWARD CURRENT (A)O, T , LEAD TEMPERATURE ( C) Fig. 1 Forward Current Derating Curve L ° 3.0 2 of 2 2.0 4.0 5.0 1 10 100 I , PEAK FORWARD SURGE CURRENT (A)FSM NUMBER OFCYCLES AT 60Hz Fig. 3 Max Non-Repetitive Peak Fwd Surge Current Single Half-Sine-Wave (JEDEC Method) 120 150 C, CAP ACITANCE (pF)j V ,REVERSE VOLTAGE (V) Fig. 4 Typical Junction CapacitanceR 100 1000 3000 0.1 1.0 10 100 T =25 Cj ° 0 20 40 60 80 100 120 140 I ,INST ANTANEOUS REVERSE CURRENT (mA)R PERCENT OFRA TED PEAK REVERSE VOLTAGE (%) Fig. 5 Typical Reverse Characteristics T =125 Cj ° T = 75 Cj ° T =25 Cj ° 100 1.0 0.1 0.01 0.001 0.1 1.0 0 0.2 0.4 0.6 0.8 1.0 I ,INST ANTANEOUS FORWARD CURRENT (A)F V ,INST ANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics F T -25 Cj ° I PulseWidth = 300 sF m MS508-MS520 MS505-MS506 MS502-MS504 SB550-SB5200 SB520-SB540 MS502 – MS520 MS502 – MS520