MS508 MICROSEMI | Alldatasheet
Document overview
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Technical content
o—_- Dim. Inches Millimeter Minimum Maximum Minimum Maximum Notes A 188 .260 4.78 6.50 Dia. Cc -285 375 7.24 9.52 CATHODE BAND D 046 056 1.17 1.42 Dia. N\\ c ¥
3 PLASTIC DO201AD
—Lo Working Repetitive ; i Microsemi Peak Reverse Peak Reverse © Schottky Barrier Rectifier Catalog Number Voltage Voltage © Guard Ring Protection Low power loss, high efficiency MSS08 80V 80V . . MS509 90V 90v @ High surge capacity MS510 100V 100V e VRRM 80 to 100 Volts
Electrical Characteristics
Average forward current | F(AV) 5.0 Amps TA = 131°C Square wove, ROL = 11°C/W, L = 1/8" Average forward current | FAV) 5.0 Amps TA = 116°C Square wave, RAJL = 14.7°C/W, L = 3/8” Maximum surge current | FSM ‘250 Amps 8.3ms, half sine, TJ = 175°C Max peak forward voltage VFM .60 Volts 'FM = 5.0A:TU = 175°C* Max peak forward voltage VFM .80 Volts IFM = 5.0A:TJ = 25°C* Max peak reverse current 'RM_250 uA VRRM,T = 25°C Typical junction capacitance Cy 280 pF VR = 5.0V,1J = 25°C *Pulse test: Pulse width 300 usec, Duty cycle 2% Thermal and Mechanical Characteristics Storage temperature range TsT¢ -55°C to 175°C Operating junction temp range Ji —55°C to 175°C Maximum thermal resistance L = 1/8” Rew °C/W Junction to lead L = 3/8" Row 14.7°C/W Junction to lead Weight .032 ounces (1.0 grams) typical 4-6-00 Rev. 1 . COLORADO 800 Hoyt Street Broomfield, CO. 80020 icrosemi 2% FAX: (303) 466-3775 www.microsemi.com