MS4N60 BWTECH | Alldatasheet

Document overview

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Technical content

Features

  • BVDSS=650V typically @ Tj=150°C
  • Low On Resistance
  • Simple Drive Requirement
  • Low Gate Charge
  • Fast Switching Characteristic
  • RoHS compliant package Application
  • Open Framed Power Supply
  • Adapter
  • STB Packing & Order Information 50/Tube ; 1,000/Box Graphic symbol MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings (Tc=25°C unless otherwise specified) Symbol Parameter Value Unit VDSS Drain to Source Voltage 600 V VGS Gate to Source Voltage ±30 V ID Continuous Drain Current (TC=25°C) Continuous Drain Current (TC=100°C) 4.5 2.6 A IDM Drain Current Pulsed 18 A EAS Single Pulsed Avalanche Energy 210 mJ EAR Repetitive Avalanche Energy 10 mJ dv/dt Peak Diode Recovery dv/dt 4.5 V/ns
  • Drain current limited by maximum junction temperature

N-Channel Enhancement Mode Power MOSFET Publication Order Number: [ MS4N60] © Bruckewell Technology Corporation Rev. A -2014 Absolute Maximum Ratings (Tc=25°C unless otherwise specified) Symbol Parameter Value Unit TL TL Maximum Temperature for Soldering @ Lead at 0.125 in(0.318mm) from case for 10 seconds 300 °C TPKG TPKG Maximum Temperature for Soldering @ Package Body for 10 seconds 260 °C PD Total Power Dissipation(@TC = 25 °C) 100 W Derating Factor above 25 °C 100 W

0.8 W/°C

TSTG Operating Junction Temperature -55 to +150 °C TJ Storage Temperature 150 °C Note: 1.Repetitive rating; pulse width limited by maximum junction temperature. 2. IAS=4A, VDD=50V, L=8mH, VG=10V, starting TJ=+25°C. 3. ISD≤4A, dI/dt≤100A/μs, VDD≤BVDSS, starting TJ=+25°C. Thermal Characteristics Symbol Parameter Value Units Min. Typ. Max. RθJC Thermal Resistance,Junction-to-Case -- -- 1.25 °C/W RθJA Thermal Resistance,Junction-to-Ambient -- -- 62.5 °C/W Static Characteristics Symbol Parameter Test Conditions Min Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS = 0 V , ID = 250μA 600 -- -- V △BVDSS /△TJ Breakdown Voltage Temperature Coefficient ID= 250μA, Referenced to 25°C -- 0.6 -- V/°C VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 uA 2.0 -- 4.0 V IDSS Drain-Source Leakage Current VDS = 600 V , VGS = 0 V VDS = 480 V , TC = 125°C -- -- 1 uA nA IGSS Gate-Source Leakage,Forward VGS = ±30 -- -- 100 nA RDS(ON) Static Drain-Source On-state Resis-tance VGS = -10 V , ID = 2.25 A -- 2.0 2.5 Ω Dynamic Characteristics Symbol Parameter Test Conditions Min Typ. Max. Units Qg Total Gate Charge VDS = 480 V, VGS = 10 V, ID = 4.5 A -- 16 -- nC Qgs Gate-Source Charge -- 2.5 -- nC Qgd Gate-Drain Charge (Miller Charge) -- 6.5 -- nC

N-Channel Enhancement Mode Power MOSFET Publication Order Number: [ MS4N60] © Bruckewell Technology Corporation Rev. A -2014 Dynamic Characteristics Symbol Parameter Test Conditions Min Typ. Max. Units td(on) Turn-On Delay Time VDD = 300 V, ID = 4.5 A, VGS = 10 V, RG = 25 Ω, RD =75 Ω -- 10 -- ns tr Rise Time -- 40 -- ns td(off) Turn-Off Delay Time -- 40 -- ns tf Fall Time -- 50 -- ns CISS Input Capacitance VGS = 0 V, VDS = 25 V, f = 1MHz -- 560 -- pF COSS Output Capacitance -- 55 -- pF CRSS Reverse Transfer Capacitance -- 7 -- pF

N-Channel Enhancement Mode Power MOSFET Publication Order Number: [ MS4N60] © Bruckewell Technology Corporation Rev. A -2014 ■Characteristics Curve FIG.1-ON REGION CHARACTERISTICS FIG.2-TRANSFER CHARACTERISTICS FIG.3-ON RESISTANCE VARIATION VS DRAIN CURRENT AND GATE VOLTAGE FIG.4-BODY DIODE FORWARD VOLTAGE VARIATION WITH SOURCE CURRENT AND TEMPERATURE FIG.5-CAPACITANCE CHARACTERISTICS FIG.6-GATE CHARGE CHARACTERISTICS

N-Channel Enhancement Mode Power MOSFET Publication Order Number: [ MS4N60] © Bruckewell Technology Corporation Rev. A -2014 ■Characteristics Curve FIG.7-BREAKDOWN VOLTAGE VARIATION VS TEMPERATURE FIG.8-ON-RESISTANCE VARIATION VS TEMPERATURE FIG.9-MAXIMUM SAFE OPERATING AREA FIG.10-MAXIMUM DRAIN CURRENT VS CASE TEMPERATURE FIG.11-TRANSIENT THERMAL RESPONSE CURVE

N-Channel Enhancement Mode Power MOSFET Publication Order Number: [ MS4N60] © Bruckewell Technology Corporation Rev. A -2014 Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY , FUNCTION OR DESIGN OR OTHERWISE. Bruckewell Technology Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Bruckewell”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Bruckewell makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Bruckewell disclaims (i) Any and all liability arising out of the application or use of any product. (ii) Any and all liability, including without limitation special, consequential or incidental damages. (iii) Any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Bruckewell’s knowledge of typical requirements that are often placed on Bruckewell products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. Product specifications do not expand or otherwise modify Bruckewell’s terms and conditions of purchase, including but not limited to the warranty expressed therein.