MS40N06 BWTECH | Alldatasheet
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MS40N06 60V N-Channel MOSFET ©Bruckewell Technology Corporation Rev. A -2014 GENERAL DESCRIPTION The MS40N06 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The QM6006M6 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. FEATURES • Advanced high cell density Trench technology • Super Low Gate Charge • Excellent CdV/dt effect decline • 100% EAS Guaranteed • Green Device Available Symbol Parameter Rating Units VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V1 40 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V1 25 A ID@TA=25℃ Continuous Drain Current, VGS @ 10V1 7.4 A ID@TA=70℃ Continuous Drain Current, VGS @ 10V1 6 A IDM Pulsed Drain Current2 80 A EAS Single Pulse Avalanche Energy3 67 mJ IAS Avalanche Current 28 A PD@TC=25℃ Total Power Dissipation4 59 W PD@TA=25℃ Total Power Dissipation4 2 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Symbol Parameter Typ. Max. Unit RθJA Thermal Resistance Junction-Ambient 1 --- 62 ℃/W RθJC Thermal Resistance Junction-Case1 --- 2.1 ℃/W
MS40N06 60V N-Channel MOSFET ©Bruckewell Technology Corporation Rev. A -2014
MS40N06 60V N-Channel MOSFET ©Bruckewell Technology Corporation Rev. A -2014
MS40N06 60V N-Channel MOSFET ©Bruckewell Technology Corporation Rev. A -2014 Fig 11. Gate Charge Test Circuit & Waveform Fig 12. Unclamped Inductive Switching Test Circuit & Waveforms
MS40N06 60V N-Channel MOSFET ©Bruckewell Technology Corporation Rev. A -2014 Fig 131. Peak Diode Recovery dv/dt Test Circuit & Waveforms
MS40N06 60V N-Channel MOSFET ©Bruckewell Technology Corporation Rev. A -2014