MS3022 MICROSEMI | Alldatasheet

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Technical content

Features

  • GOLD METALLIZATIOM
  • POUT = 1.0 W MINIMUM
  • G P = 7.0 dB
  • COMMON BASE CASE OUTLINE .250 2LFL M210 (Common Base) ABSOLUTE MAXIMUM RATINGS Power Dissipation Device Dissipation @25 °C (P d) 7 W (At rated pulse condition) Voltage and Current Collector to Base Voltage (BV CES ) 45 V Emitter to Base Voltage (BV EBO ) 3.5 V Collector Current (I C ) 0.2 A Temperatures Storage Temperature -65 to +150 °C Operating Junction Temperature +200 °C PIN CONNECTION 1. Collector 2. Base 3. Emitter 4. Base ELECTRICAL CHARACTERISTICS @ 25 °° °°C SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS BV CEO Collector to Emitter Breakdown I C = 5 mA, RBE = 50 Ω 45 V BV CBO Collector to Base Breakdown I C = 1 mA, IB = 0 mA 45 V BV EBO Emitter to Base Breakdown I E = 1 mA, IC = 0 mA 3.5 V ICBO Collector to Base Leakage V CB = 28.0 V 0.5 mA H FE DC – Current Gain I C = 0.1A, VCE = 5V 15 120 - θjc 1 Thermal Resistance 25 °C/W NOTES: 1. At rated output power, pulse conditions and MSC fixture Rev. A : Oct. 2009

Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. MS3022 FUNCTIONAL CHARACTERISTICS @ 25 °° °°C SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS POUT Power Out 1.0 W PIN Power Input 0.2 W G P Power Gain 7.0 dB ηC Collector Efficiency F = 2.0GHz V CB = 28V Pin = 0.2W CW 35 % C OB Collector Base Capacitance F = 1 MHz, V CB = 28V 3.2 pF Typical Performance (2.0 GHz) Input/Output 0.00 0.20 0.40 0.60 0.80 1.00 1.20 1.40 1.60 Input Power (W) Ouput Power (W) Efficiency 0.0% 10.0% 20.0% 30.0% 40.0% 50.0% 60.0% Output Power(W) Eff. Typical Performance (1.0 GHz) Input/Output 0.00 0.20 0.40 0.60 0.80 1.00 1.20 1.40 1.60 1.80 2.00 Input Powe r (W) Ouput Power (W) Efficiency 10.0% 20.0% 30.0% 40.0% 50.0% 60.0% 70.0% Output Powe r(W) Eff.

Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. MS3022 MS3022 Test Circuit Layout (@ 2GHz) MS3022 Test Circuit Component Designations and Values Part Description Part Description C1, C2 39pF Chip Capacitor (ATC 200A) C3 100pF Chip Capacitor (ATC 200B) C4 47uF 63V Electrolytic Capacitor L1 Length: 0.32” , AWG20 M1 100 x 675 mils (W x L) M2 86 x 850 mils (W x L) M3 200 x 475 mils (W x L) M4 240 x 275 mils (W x L) M5 445 x 300 mils (W x L) M6 645 x 350 mils (W x L) M7 445 x 350 mils (W x L) M8 86 x 225 mils (W x L) M9 86 x 460 mils (W x L) M10 25 x 1055 mils (W x L) M11 25 x 1040 mils (W x L) PCB Arlon, εr=2.55, 31mils, 1oz

Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. MS3022 Typical Impedance Values DUT ZS ZL Frequency Z S ( Ω) Z L ( Ω) * V CB = 28V, P IN = 0.2W POUT > 1W * CW Input Matching Network Output Matching Network

Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. MS3022