MS2552 MICROSEMI | Alldatasheet
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Page 1Copyright 2000 MSC1665.PDF 2001-01-20 WWW.Microsemi .COM MS2552 RF & MICROWAVE TRANSISTORS PRODUCT PREVIEW RF PRODUCTS DIVISION DESCRIPTIONDESCRIPTION DESCRIPTIONDESCRIPTION The MS2552 device is a high power pulsed transistor specifically designed for DME/TACAN avionics applications. This device is capable of withstanding an infinite load VSWR at any phase angle under full rated conditions. Low RF thermal resistance and semi- automatic bonding techniques ensure high reliability and product consistency. The MS2552 is housed in the industry-standard AMPAC metal/ceramic hermetic package with internal input/output matching structures. IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com KEY FEATURES KEY FEATURES KEY FEATURES KEY FEATURES /square4 Refractory/Gold Metallization /square4 Emitter Ballasted /square4 Ruggedized VSWR ∞ :1 Capability /square4 Input/Output Matching /square4 Overlay Geometry /square4 Metal/Ceramic Hermetic Package /square4 P OUT = 325 W Min. /square4 GP = 6.7 dB Gain APPLICATIONS/BENEFITAPPLICATIONS/BENEFIT APPLICATIONS/BENEFITAPPLICATIONS/BENEFITSS SS /square4 Avionics Applications Applies only to rated RF amplifier operation ABSOLUTE MAXIMUM RATINGS (TCASE = 25°° °°C) Symbol Parameter Value Unit PDISS Power Dissipation* (TC ≤ 100 °C) 880 W IC Device Current* 24 A VCC Collector-Supply Voltage* 55 V TJ Junction Temperature (Pulsed RF Operation) 250 °C TSTG Storage Temperature -65 to +150 °C THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance 0.17 °C/W MMSS22555522
Page 2Copyright 2000 MSC1665.PDF 2001-01-20 WWW.Microsemi .COM MS2552 RF & MICROWAVE TRANSISTORS PRODUCT PREVIEW RF PRODUCTS DIVISION STATIC ELECTRICAL SPECIFICATIONS (TCASE = 25°° °°C) MS2552 Symbol Test Conditions Min. Typ. Max. Units BVCBO IC = 10 mA IE = 0 mA 65 V BVEBO IE = 1 mA IC = 0 V 3.5 V BVCER IC = 25 mA RBE = 10 Ω 65 V ICES VBE = 0 V vCE = 50 V 25 mA hFE VCE = 5 V IC = 1 A 15 120 DYMANIC ELECTRICAL SPECIFICATIONS (TCASE = 25°° °°C) MS2575 Symbol Test Conditions Min. Typ. Max. Units POUT f = 1025 – 1150 MHz PIN = 70 W VCC = 50 V 325 360 W ηη ηηc f = 1025 – 1150 MHz PIN = 70 W VCC = 50 V 40 41 % GP f = 1025 – 1150 MHz PIN = 70 W VCC = 50 V 6.7 7.1 dB Note: Pulse width = 10µSec Duty Cycle = 1% EELLEECCTTRRIICCAALLSS
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