MS2473 MICROSEMI | Alldatasheet
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Technical content
Microsemi – PPG reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct. GENERAL DESCRIPTION The MS2473 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the 1090MHz frequency band. The device has gold thin-film metallization for proven highest MTTF. Low thermal resistance packaging reduces the junction temperature and extends device lifetime. CASE OUTLINE M112 ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25oC2 2300 Watts Maximum Voltage and Current BVcbo Collector to Base Voltage 65 Volts BVebo Emitter to Base Voltage 3.5 Volts Ic Collector Current 46 Amps Maximum Temperatures Storage Temperature - 65 to + 150 oC Operating Junction Temperature + 200 oC ELECTRICAL CHARACTERISTICS @ 25 OC SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS Pout Pin Pg ηηηη c RLIN Power Out Power Input = 150W Power Gain Collector Efficiency Input Return Loss F = 1090 MHz Vcc = 50 Volts PW = 10 µsec DF = 1% F = 1090 MHz 600 6.0 150 Watts Watts dB dB BVebo BVcbo Ices h FE Θjc2 Emitter to Base Breakdown Collector to Base Breakdown Collector to Emitter Leakage DC - Current Gain Thermal Resistance Ie = 10 mA Ic = 25 mA Vce = 50V Vce = 5V, Ic = 1A 3.5 0.06 200 Volts Volts mA C/W Note 1: At rated output power and pulse conditions 2: At rated pulse conditions Initial , January 2007 MS2473
600 Watts, 50 Volts, Pulsed
Microsemi – PPG reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.microsemi.com or contact our factory direct.