MS2472 ADPOW | Alldatasheet
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Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory dire ct. MS2472 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS DESCRIPTION:DESCRIPTION: The MS2472 is a hermetically sealed, gold metallized, silicon NPN power transistor. The MS2472 is designed for applications requiring high peak power and low duty cycles such as IFF and DME. The MS2472 is internal input/output matched resulting in improved broadband performance and a low thermal resistance. ABSOLUTE MAXIMUM RATINGS ABSOLUTE MAXIMUM RATINGS (Tcase = 25 °°C) Symbol Parameter Value Unit V CBO Collector - Base Voltage 65 V V CES Collector - Emitter Voltage 65 V V EBO Emitter - Base Voltage 3.5 V IC Device Current 40 A P DISS Power Dissipation 1350 W T J Junction Temperature 200 º C T STG Storage Temperature - 65 to +150 º C Thermal DataThermal Data R TH(J - C) Thermal Resistance Junction - case 0.06 °°C/W FeaturesFeatures
- DESIGNED FOR HIGH POWER PULSED IFF AND DME
APPLICATIONS
- 60 0 W (typ.) IFF 1030 – 1090 MHz
- 55 0 W (min.) DME 1025 – 1150 MHz
- 1025 - 1150 MHz
- P OUT = 550 WATTS
- G P = 5.6 dB MINIMUM
- GOLD METALLIZATION
- INTERNAL INPUT/OUTPUT MATCHED
- COMMON BASE CONFIGURATION
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA 18936 - 1013 PHONE: (215) 631 - 9840 FAX: (215) 631 - 9855
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory dire ct. MS2472 ELECTRICAL SPECELECTRICAL SPEC IFICATIONS (Tcase = 25IFICATIONS (Tcase = 25 °°C)C) STATICSTATIC Value Symbol Test Conditions Min. Typ. Max. Unit BV CBO IC = 25 mA IE = 0 mA 65 --- --- V BV CES IC = 50 mA V E = 0 V 65 --- --- V BV EBO IC = 10 mA IC = 0 mA 3.5 --- --- V ICES V CE = 50 V IE = 0 mA --- --- 35 mA H FE V CE = 5 V IC = 0.25 A 5 --- 200 --- DYNAMICDYNAMIC Value Symbol Test Conditions Min. Typ. Max. Unit P OUT f = 1025 - 1150MHz P IN = 150W V CE = 50V 550 --- --- W G P f = 1025 - 1150MHz P IN = 150W V CE = 50V 5.6 --- --- dB Conditions: Pulse Width = 10 µµs Duty Cycle = 1% IMPEDANCE DATAIMPEDANCE DATA FREQ Z IN ( Ω)Ω) Z CL ( Ω)Ω) 1025 MHz 2.50 + j2.7 1.33 - j1.7 1090 MHz 2.60 + j1.6 1.33 - j1.9 1150 MHz 1.90+ j0.7 1.33 - j2.1 P IN = 150W V CC = 50V
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory dire ct. MS2472 TEST CIRCUITTEST CIRCUIT
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory dire ct. MS2472 PACKAGE MECHANICAPACKAGE MECHANICA L DATAL DATA