MS2393 MICROSEMI | Alldatasheet
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Page 1Copyright 2000 MSC1660.PDF 2001-01-30 WWW.Microsemi .COM MS2393 RF & MICROWAVE TRANSISTORS PRODUCT PREVIEW RF PRODUCTS DIVISION DESCRIPTIONDESCRIPTIONDESCRIPTIONDESCRIPTION The MS2393 is a gold metallized, silicon NPN power transistor. The MS2393 is designed for applications requiring high peak power and low duty cycles such as IFF, DME and TACAN. The MS2393 is packaged in a metal/ceramic package with internal input/output matching, resulting in improved broadband performance and low thermal resistance. IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com ABSOLUTE MAXIMUM RATINGS (TCASE = 25°°°°C) Symbol Parameter Value Unit VCBO Collector-Base Voltage 65 V VCES Collector-Emitter Voltage 65 V VEBO Emitter-Base Voltage 3.5 V IC Device Current 11 A PDISS Power Dissipation 583 W TJ Junction Temperature +200 °C TSTG Storage Temperature -65 to +150 °C THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance 0.30 °C/W KEY FEATURES KEY FEATURES KEY FEATURES KEY FEATURES /square4 Designed For High Power Pulse IFF, DME, and TACAN
Applications
/square4 200 W (typ.) IFF 1030 –
1090 MHz
/square4 150 W (min.) DME 1025 – 1150 MHz /square4 140 W (typ.) TACAN 960 – 1215 MHz /square4 8.2 dB Gain /square4 Refractory Gold Metallization /square4 Ballasting And Low Thermal Resistance For Reliability And Ruggedness /square4 30:1 Load VSWR Capability At Specified Operating Conditions /square4 Input And Output Matched Common Base Configuration APPLICATIONS/BENEFITAPPLICATIONS/BENEFITAPPLICATIONS/BENEFITAPPLICATIONS/BENEFITSSSS /square4 Avionics Applications MMSS22339933
Page 2Copyright 2000 MSC1660.PDF 2001-01-30 WWW.Microsemi .COM MS2393 RF & MICROWAVE TRANSISTORS PRODUCT PREVIEW RF PRODUCTS DIVISION STATIC ELECTRICAL SPECIFICATIONS (TCASE = 25°°°°C) MS2393 Symbol Test Conditions Min. Typ. Max. Units BVCBO IC = 10 mA IE = 0 mA 65 V BVCES IC = 25 mA VBE = 0 V 65 V BVEBO IE = 5 mA IC = 0 mA 3.5 V ICES VCE = 50 V IE = 0 mA 10 mA hFE VCE = 5 V IC = 300 mA 5 DYMANIC ELECTRICAL SPECIFICATIONS (TCASE = 25°°°°C) MS2393 Symbol Test Conditions Min. Typ. Max. Units POUT f = 1025 – 1150 MHz PIN = 25 W VCE = 50 V 150 W GP f = 1025 – 1150 MHz PIN = 25 W VCE = 50 V 8.2 dB Condition Pulse Width = 10µS, Duty Cycle = 1% EELLEECCTTRRIICCAALLSS
Page 3Copyright 2000 MSC1660.PDF 2001-01-30 WWW.Microsemi .COM MS2393 RF & MICROWAVE TRANSISTORS PRODUCT PREVIEW RF PRODUCTS DIVISION PPAACCKKAAGGEE DDAATTTTAA
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