MS2393 ADPOW | Alldatasheet

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Technical content

Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. DESCRIPTION: The MS2393 is a gold metallized, silicon NPN power transistor. The MS2393 is designed for applica tions requiring high peak power and low duty cycles such as IFF, DME and TACAN. The MS2393 is packaged in a metal/ceramic package with internal input/output matching, resulting in improved broadband performance and low thermal resistance. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter Value Unit V CBO Collector - Base Voltage 65 V V CES Collector - Emitter Voltage 65 V V EBO Emitter - Base Voltage 3.5 V IC Device Current 11 A P DISS Power Dissipation 583 W T J Junction Temperature +200 °°C T STG Storag e Temperature - 65 to +150 °°C Thermal Data R TH(j - c) Junction - Case Thermal Resistance 0.30 °°C/W FeaturesFeatures

  • Designed For High Power Pulse IFF, DME, and TACAN

Applications

  • 200 W (typ.) IFF 1030 – 1090 MHz
  • 150 W (min.) DME 1025 – 1150 MHz
  • 140 W (typ.) TACAN 960 – 1215 MHz
  • 8.2 dB Gain
  • Refractory Gold Metallization
  • Ballasting And Low Thermal Resistance For Reliability And Ruggedness
  • 20:1 Load VSWR At Specified Operating Conditions
  • Input And Output Matched Common Base Configuration RF AND MICROWAVE TRA NSISTORS AVIONICS APPLICATION S

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Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. ELECTRICAL SPECIFICATIONS (Tcase = 25ELECTRICAL SPECIFICATIONS (Tcase = 25 °°C)C) STATIC Value Symbol Test Conditions Min. Typ. Max. Units BV CBO IC = 10 mA IE = 0 mA 65 V BV CES IC = 25 mA V BE = 0 V 65 V BV EBO IE = 5 mA IC = 0 mA 3.5 V I CES V CE = 50 V IE = 0 mA 10 mA h FE V CE = 5 V IC = 300 mA 5 DYNAMIC Value Symbol Test Conditions Min. Typ. Max. Units P OUT f = 1025 – 1150 MHz P IN = 25 W V CE = 50 V 150 W G P f = 1025 – 1150 MHz P IN = 25 W V CE = 50 V 8.2 dB Condition : Pulse Width = 10 µµS, Duty Cycle = 1% IMPEDANCE DATAIMPEDANCE DATA

Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. TYPICAL PERFOTYPICAL PERFO RMANCERMANCE

Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. TEST CIRCUITTEST CIRCUIT

Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. PACKAGE MECHANICAL DATAPACKAGE MECHANICAL DATA