MS2361 ADPOW | Alldatasheet
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Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. MS2361 DESCRIPTION:DESCRIPTION: The MS2361 is a gold metallized silicon, NPN power transistor designed fo r applications requiring high peak power and low duty cycles such as IFF, DME and TACAN. The MS2361 is packaged in the 0.280” input matched stripline package resulting in improved broadband performance and a low thermal resistance. ABSOLUTE MAXIMUABSOLUTE MAXIMU M RATINGS M RATINGS (Tcase = 25 °°C) Symbol Parameter Value Unit V CBO Collector - Base Voltage 65 V V CES Collector - Emitter Voltage 65 V V EBO Emitter - Base Voltage 3.5 V IC Device Current 5.5 A P DISS Power Dissipation 218.7 W T J Junction Temperature +200 °°C T STG Storage Temperature - 65 to +150 °°C Thermal DataThermal Data R TH(J - C) Junction - case Thermal Resistance 0.8 °°C/W FeaturesFeatures
- DESIGNED FOR HIGH POWER PULSED IFF, DME, TACAN, APPLICATIONS
- 80 WATTS (typ.) IFF 1030 – 1090 MHz
- 75 WATTS (min.) DME 1025 – 1150 MHz
- 50 WATTS (typ.) TACAN 960 – 1215 MHz
- 7.6 dB MIN. GAIN
- REFRACTORY GOLD METALLIZATION
- EMITTER BALLASTI NG AND LOW THERMAL RESISTANCE FOR RELIABILITY AND RUGGEDNESS
- INFINITE LOAD VSWR CAPABILITY AT SPECIFIED OPERATING CONDITIONS
- INPUT MATCHED, COMMON BASE CONFIGURATION RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA 18936 - 1013 PHONE: (215) 631 - 9840 FAX: (215) 631 - 9855
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. MS2361 ELECTRICAL SPECIFICATIONS (Tcase = 25ELECTRICAL SPECIFICATIONS (Tcase = 25 °°C)C) STATICSTATIC Value Symbol Test Conditions Min. Typ. Max. Unit BV CBO IC = 10mA IE = 0mA 65 --- --- V BV CES IC = 25mA V BE = 0V 65 --- --- V BV EBO IE = 10mA IC = 0mA 3.5 -- - --- V ICES V CE = 50V IE = 0mA --- --- 5 mA h FE V CE = 5V IC = 100mA 10 --- --- --- DYNAMICDYNAMIC Value Symbol Test Conditions Min. Typ. Max. Unit P OUT f =1025 - 1150 MHz P IN = 13.0W V CE = 50V 75 --- --- W G P f =1025 - 1150 MHz P IN = 13.0W V CE = 50V 7.6 --- --- dB Note: Pulse Width = 10us, Duty Cycle = 1% This device is suitable for use under other pulse width/duty cycle conditions. Please contact the factory for specific application assistance. IMPEDANCE DATAIMPEDANCE DATA FREQ Z IN ( ΩΩ ) Z CL ( ΩΩ ) 960 MHz 2.5 + j 13.0 4.6 + j 5.5 1030 MHz 5.2 + j 15.0 5.0 + j 5.5 1090 MHz 16.3 + j 15.0 4.8 + j 5.5 1150 MHz 14.7 + j 2.5 4.7 – j 7.0 1215 MHz 7.6 + j 0.5 4.7 – j 5.0 P IN = 13W V CC = 50V Pulse Width = 10uSec Duty Cycle = 1%
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. MS2361 PACKAGE MECHANICAL DATAPACKAGE MECHANICAL DATA