MS2267 ADPOW | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 6
Technical content
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory dire ct. DESCRIPTION:DESCRIPTION: The MS2267 is a high power Class C NPN transistor specifically designed for TACAN/DME applications. This device is capable of operation under moderate pulse width and duty cycles. Low thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency. The MS2267 utilizes an emitter ballasted die geometry capable of operating into a 5:1 VSWR @ 1.0 dB overdrive. ABSOLUTE MAXIMUM RATINGS ABSOLUTE MAXIMUM RATINGS (Tcase = 25 °°C) Symbol Parameter Value Unit P DISS Power Dissipation * ( T C ≤≤ 90 °°C ) 575 W IC Device Current * 20 A V cc Collector - Supply Voltage * 50 V T J Junction Temperature ( Pulsed RF Operation ) 25 0 °°C T STG Storage Temperature - 65 to +200 °°C Thermal DataThermal Data R TH(J - C) Junction - case Thermal Resistance ∗∗ ( 1 ) 0.28 °°C/ W * Applies only to rated RF amplifier operation ( 1 ) Infra - red scan of hot spot junction temperature at rated RF operating conditions FeaturesFeatures
- 960 – 1215MHz
- 50 VOLTS
- 5:1 VSWR CAPABILITY @ RATED CONDITIONS
- INPUT/OUTPUT MATCHING
- P OUT = 250 WATTS
- G P = 8.0 dB MINIMUM
- • COMMON BASE CONFIGURATION RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA 189 36 - 1013 PHONE: (215) 631 - 9840 FAX: (215) 631 - 9855
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory dire ct. ELECTRICAL SPECIFICATIONS (Tcase = 25 ELECTRICAL SPECIFICATIONS (Tcase = 25 °°C)C) STATICSTATIC Value Symbol Test Conditions Min. Typ. Max. Unit BV CBO IC = 35mA IE = 0 mA 65 --- --- V BV EBO IE = 15mA IC = 0 mA 4.0 --- --- V BV CES IC = 25mA IB = 0 mA 60 --- --- V ICES V BE = 0 V V CE = 50V --- --- 20 mA h FE V CE = 5V IC = 1A 10 --- --- --- DYNAMICDYNAMIC Value Symbol Test Conditions Min. Typ. Max. Unit P OUT f = 960 - 1215MHz P IN = 40W V CC = 50V 250 295 --- W ηηc f = 960 - 1215MHz P IN = 40W V CC = 50V 38 44 --- % G P f = 960 - 1215MHz P IN = 40W V CC = 50V 8.0 8.7 --- dB Conditions: Pulse width = 20 µµS Duty Cycle = 5% T C = 25 °°C IMPEDANCE DATAIMPEDANCE DATA FREQ Z IN ( Ω)Ω) Z CL ( Ω)Ω) 960 MHz 1.0 + j3.5 1.9 – j1.8 1 090MHz 4.0 + j3.5 1.6 – j0.9 1215MHz 2.2 + j2.2 1.4 – j1.1 P IN = 40W V CC = 50V
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory dire ct. TYPICAL PERFORMANCETYPICAL PERFORMANCE
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory dire ct. TYPICAL PERFORMANCETYPICAL PERFORMANCE ( (CONTINUEDCONTINUED ))
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory dire ct. TEST CIRCUITTEST CIRCUIT
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory dire ct. PACKAGE MECHANICAL DATAPACKAGE MECHANICAL DATA