MS2231 ADPOW | Alldatasheet

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Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. DESCRIPTION: The MS2231 is a high - power Class C transistor specifically de signed for L - Band Radar pulsed driver applications. This device is capable of operation over a wide range of pulse widths, duty cycles, and termperatures and is capable of withstanding 3:1 output WSWR at rated RF conditions. Low RF thermal resistance and c omputerized automatic wire bonding techniques ensure high reliability and product consistency. The MS2231 is supplied in the grounded IMPAC  hermetic metal/ceramic package with internal input/output matching structures. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter Value Unit P DISS Power Dissipation * (T C ≤≤ 100 °°C) 270 W IC Device Current * 13.5 A V CC Collector - Supply Voltage * 32 V T J Junction Temperature (Pulsed RF Operation) 250 °°C T STG Storage Temperature – 65 to + 200 °°C Thermal Data R TH(j - c) Junction - Case Thermal Resistance * 0.55 °°C/W *Applies only to rated RF amplifier operation FeaturesFeatures

  • REFRACTORY/GOLD METALLIZATION
  • EMITTER SITE BALLASTED
  • LOW THERMAL RESISTANCE
  • INPUT / OUTPUT MATCHING
  • METAL/CERAMIC HERMETIC PACKAGE
  • P OUT = 100 W MIN.
  • G P = 6.0 dB GAIN RF AND MICROWAVE TRA NSISTORS L - BAND APPLICATIONS

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Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. ELECTRICAL SPECIFICATIONS (Tcase = 25ELECTRICAL SPECIFICATIONS (Tcase = 25 °°C)C) STATIC Value Symbol Test Conditions Min. Typ. Max. Units BV CBO IC = 50 mA IE = 0 mA 65 V BV EBO IE = 10 mA IC = 0 mA 3.5 V BV C ES IC = 100 mA 65 V ICES V BE = 0 V V CE = 32 V 20 mA h FE V CE = 5 V IC = 5 A 15 DYNAMIC Value Symbol Test Conditions Min. Typ. Max. Units P OUT f = 1215 – 1400 MHz P IN = 25 W V CE = 28 V 100 W ç C f = 1215 – 1400 MHz P IN = 25 W V CE = 28 V 50 % G P f = 1215 – 1400 MHz P IN = 25 W V CE = 28 V 6 dB Note: Pulse width = 100µSec Duty Cycle = 10%

Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. PACKAGE MECHANICAL DATAPACKAGE MECHANICAL DATA