MS2223 ADPOW | Alldatasheet
Document overview
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- PDF pages: 3
Technical content
Features
- GOLD METALLIZATION
- EMITTER SITE BALLASTED
- Pout = 70 W MINIMUM
- Gp = 6.7 dB
- OVERLAY GEOMETRY
- METAL/CERAMIC HERMETIC PACKAGE
- LOW THERMAL RESISTANCE DESCRIPTION:DESCRIPTION: The MS2223 is a silicon NPN bipolar transistor designed for avionics applications with high duty cycle requirements. Gold metallization and emitter ballasting provides long term reliability under long pulse formats. RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at WWW.ADVANCEDPOWER.COM or contact our factory direct.
MSC0XXXA.DOC 5-13-99 MS2223MS2223 ELECTRICAL SPECIFICATIONS ( ELECTRICAL SPECIFICATIONS ( Tcase = 25Tcase = 25 °°C)C) STATICSTATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO IC = 25mA IE = 0 mA 55 ---- ---- V BVCER IC = 25 mA RBE = 10 WW 55 ---- ---- V BVEBO IE = 10 mA IC = 0 mA 3.5 ---- ---- V ICES VCE = 35 V VBE = 0 V ---- ---- 20 mA hFE VCE = 5 V IC = 2A 20 ---- 200 ---- DYNAMICDYNAMIC Symbol Test Conditions Value Min. Typ. Max. Unit POUT f = 1090 MHz PIN = 15 W VCC = 28 V 70 ---- ---- W hhC f = 1090 MHz PIN = 15 W VCC = 28 V 45 ---- ---- % GP f = 1090 MHz PIN = 15 W VCC = 28 V 6.7 ---- ---- dB Condition s Pulse Width: 100 mmS Duty Cycle: 2% IMPEDANCE DATA:IMPEDANCE DATA: FREQUENCY Zin Zcl 1025 MHz 4.7 + j4.7 3.6 + j4.3 1090 MHz 4.7 + j3.9 3.3 + j4.4 Pin = 15W Vcc = 28V
MSC0XXXA.DOC 5-13-99 MS2223 PACKAGE MECHANICAL DATA